BSC0504NSIATMA1 vs IAUC120N06S5L032ATMA1 比較
詳細並排比較 BSC0504NSIATMA1 由 Infineon 與 IAUC120N06S5L032ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0504NSIATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-channel MOSFET | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| 封裝 | PG-TDSON-8-6 | PG-TDSON-8-34 (5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| 閘極臨界電壓 | [DATA_NEEDED: gate threshold voltage] | — |
| 熱阻 | [DATA_NEEDED: thermal resistance] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (T_j) |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS 狀態 | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| Technology | — | OptiMOS 5 Trench |
| AEC-Q101 Qualified | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |