BSC0504NSIATMA1 vs IPT007N06NATMA1 比較
詳細並排比較 BSC0504NSIATMA1 由 Infineon 與 IPT007N06NATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0504NSIATMA1 | IPT007N06NATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| 封裝 | PG-TDSON-8-6 | PG-HSOF-8-1 (TOLL) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| 閘極臨界電壓 | [DATA_NEEDED: gate threshold voltage] | — |
| 熱阻 | [DATA_NEEDED: thermal resistance] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS 狀態 | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | — | 0.75 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | — | 375 W |
| Configuration | — | Single N-channel |
| Gate Charge (QG) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | — | [DATA_NEEDED: RthJC] |
| MSL 等級 | — | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |