BSC0504NSIATMA1 vs IPT007N06NATMA1 对比

详细并排对比 BSC0504NSIATMA1 出自 Infineon 和 IPT007N06NATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ 量产中

规格对比

参数 BSC0504NSIATMA1 IPT007N06NATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $2.84
晶体管类型 N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
封装 PG-TDSON-8-6 PG-HSOF-8-1 (TOLL)
安装类型 Surface Mount Surface Mount
引脚数 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
栅极阈值电压 [DATA_NEEDED: gate threshold voltage] —
热阻 [DATA_NEEDED: thermal resistance] —
工作温度范围 [DATA_NEEDED: operating temperature range] -55 C to +175 C (TJ)
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
RoHS 状态 unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Technology — OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC=25C) — 300 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on), VGS=10V max) — 0.75 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Power Dissipation (PD, TC=25C) — 375 W
Configuration — Single N-channel
Gate Charge (QG) — [DATA_NEEDED: total gate charge]
Avalanche Energy (EAS) — [DATA_NEEDED: single-pulse avalanche energy]
Thermal Resistance (RthJC max) — [DATA_NEEDED: RthJC]
MSL 等级 — MSL 1 (per JEDEC J-STD-020)
Lead-Free — Yes
无卤 — Yes
Standard Pack Quantity — 3000 (Tape & Reel)

数据手册与资源

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