BSF134N10NJ3GXUMA1 vs AIMBG120R010M1XTMA1 比較
詳細並排比較 BSF134N10NJ3GXUMA1 由 Infineon 與 AIMBG120R010M1XTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSF134N10NJ3GXUMA1 | AIMBG120R010M1XTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 1200 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| 封裝 | MG-WDSON-2 (CanPAK M) | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| 工作溫度範圍 | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |
| Technology | Trench-gate OptiMOS planar | Silicon Carbide (SiC) Trench MOSFET |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Product Family | — | CoolSiC™ G1 Automotive SiC Trench MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 205 A |
| On-Resistance RDS(on), typ | — | 8.7 mΩ |
| Power Dissipation (PD, Tc) | — | 882 W |
| 工作接面溫度 | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |
| 腳位數 | — | 7 + Tab |
| Lead-Free | — | Yes |