BSP135H6327XTSA1 vs BSP315PH6327XTSA1 比較
詳細並排比較 BSP135H6327XTSA1 由 Infineon 與 BSP315PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP135H6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | -60 V |
| Continuous Drain Current (ID) | 120 mA | -1.17 A (Ta) |
| Power Dissipation (PD) | 1.8 W | 1.8 W (Ta) |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | ±20 V (max) |
| Operating Mode | Normally ON (depletion) | — |
| 封裝 | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | OptiMOS (enhancement mode) |
| 工作溫度範圍 | -55C to +150C (junction, typical) | -55 C to +150 C (junction) |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |