BSS138LT1G vs FDV301N 比較

詳細並排比較 BSS138LT1G 由 onsemi 與 FDV301N 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSS138LT1G FDV301N
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET N-Channel Enhancement Mode MOSFET (Digital FET)
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET —
Channel Mode Enhancement Mode —
封裝 SOT-23-3 (TO-236) SOT-23-3
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS compliance status]
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Drain-Source Voltage (Vdss) — 25 V
Continuous Drain Current (Id) — 220 mA (Ta)
Peak Drain Current — 0.5 A
RDS(on) at VGS = 2.7 V — 5 ohm (typical)
RDS(on) typical — 4 ohm
Power Dissipation (Pd) — 350 mW (Ta)
Technology — High cell density DMOS
Gate Drive Type — Logic level (no bias resistors required)
Gate-Source Voltage (Vgs) Max — [DATA_NEEDED: maximum gate-source voltage]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Thermal Resistance (RthJA) — [DATA_NEEDED: thermal resistance junction to ambient]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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