BSS138NH6327XTSA2 vs BSS308PEH6327XTSA1 比較
詳細並排比較 BSS138NH6327XTSA2 由 Infineon 與 BSS308PEH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ 啟用中規格比較
| 參數 | BSS138NH6327XTSA2 | BSS308PEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| 封裝 | PG-SOT-23 (3-pin) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: Tj max and operating range] | -55 °C to +150 °C |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| 無鹵素 | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | Tape & Reel (T/R) |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| 電晶體類型 | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| 封裝 / 外殼 | — | PG-SOT23 (SOT-23-3) |
| 腳位數 | — | 3 |
| Qualification | — | AEC-Q101 Automotive |
| RoHS 狀態 | — | Compliant |
| Standard Reel Quantity | — | 3000 pcs |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |