BSS214NWH6327XTSA1 vs BSD316SNH6327XTSA1 比較

詳細並排比較 BSS214NWH6327XTSA1 由 Infineon 與 BSD316SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 啟用中
Infineon
BSD316SNH6327XTSA1 BSD316SNH6327XTSA1 - 30V N-Ch 1.4A MOSFET | Infineon | SOT-363

BSD316SNH6327XTSA1 - 30V N-Ch 1.4A MOSFET | Infineon | SOT-363

BSD316SNH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS214NWH6327XTSA1 BSD316SNH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS214NWH6327XTSA1 —
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) @ 25C 1.5 A —
Rds(on) Max @ Vgs=4.5V 250 mOhm —
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V —
Power Dissipation (Pd) @ Ta=25C 500 mW —
封裝 PG-SOT323 (SOT-323-3) SOT-363 (PG-SOT363-PO), 6-pin
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +150C (junction) —
Qualification AEC-Q101 (Automotive) —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Product Family — Small Signal N-Channel MOSFET
Polarity — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 1.4 A (Ta)
Power Dissipation (PD) — 500 mW (Ta=25C)
Automotive Qualification — AEC-Q101 qualified
Operating Mode — Enhancement-mode
Lead Plating — Pb-free (lead-free)
MSL 等級 — [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
工作溫度範圍 — [DATA_NEEDED: junction/ambient temperature range]

資料表與資源

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