BSS314PEH6327XTSA1 vs BSS214NH6327XTSA1 比較

詳細並排比較 BSS314PEH6327XTSA1 由 Infineon 與 BSS214NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 ✓ 啟用中
Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS314PEH6327XTSA1 BSS214NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (planar N-channel)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) @ TA=25C -1.5 A —
Power Dissipation (PD) @ TA=25C 500 mW —
RDS(on) max @ VGS=-10V 140 mOhm —
RDS(on) max @ VGS=-4.5V [DATA_NEEDED: RDS(on) at -4.5V VGS] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Drive Voltage (max Rds(on)) -4.5 V, -10 V —
封裝 PG-SOT23-3 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 C to +150 C (TJ) -55C to +150C (junction)
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Pin Configuration G-D-S (Gate, Drain, Source) —
MSL 等級 MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Drain-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) — 1.5 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Lead Finish — Pb-free lead plating (matte tin)
ESD Protection — Yes (gate ESD diode)

資料表與資源

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