BSZ018NE2LSIATMA1 vs BSZ024N04LS6ATMA1 比較
詳細並排比較 BSZ018NE2LSIATMA1 由 Infineon 與 BSZ024N04LS6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ018NE2LSIATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ018NE2LSIATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| 工作溫度範圍 | -55 C to +150 C | — |
| 封裝 | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount, top-side drain pad |
| Technology | OptiMOS (Infineon trench MOSFET) | OptiMOS 6 (shielded-gate trench) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Ta) | — | 24 A |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Pulsed Drain Current (I_DM) | — | 130 A |
| R_DS(on) Max @ V_GS=10V | — | 2.4 mΩ |
| R_DS(on) Max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | — | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | — | 25 nC |
| Input Capacitance (C_iss) | — | 1.8 nF |
| Output Capacitance (C_oss) | — | 19 pF |
| Power Dissipation (P_D, Ta) | — | 2.5 W |
| Power Dissipation (P_D, Tc) | — | 75 W |
| 工作接面溫度 | — | -55°C to +175°C |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |