BSZ018NE2LSIATMA1 vs BSZ024N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSZ018NE2LSIATMA1 by Infineon and BSZ024N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β Active
Specification Comparison
| Parameter | BSZ018NE2LSIATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.46 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ018NE2LSIATMA1 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at Ta=25C | 22 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | 160 A | β |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 69 W | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount, top-side drain pad |
| Technology | OptiMOS (Infineon trench MOSFET) | OptiMOS 6 (shielded-gate trench) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Ta) | β | 24 A |
| Continuous Drain Current (I_D, Tc) | β | 40 A |
| Pulsed Drain Current (I_DM) | β | 130 A |
| R_DS(on) Max @ V_GS=10V | β | 2.4 mΞ© |
| R_DS(on) Max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | β | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | β | 25 nC |
| Input Capacitance (C_iss) | β | 1.8 nF |
| Output Capacitance (C_oss) | β | 19 pF |
| Power Dissipation (P_D, Ta) | β | 2.5 W |
| Power Dissipation (P_D, Tc) | β | 75 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |