BSZ065N06LS5ATMA1 vs BSC066N06NSATMA1 比較
詳細並排比較 BSZ065N06LS5ATMA1 由 Infineon 與 BSC066N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ065N06LS5ATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 logic-level | OptiMOS 5 60 V trench-gate |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) Max | 65 A | — |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | — |
| Power Dissipation (PD) Max | 46 W | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V | 1.7 V (typ) |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V | 26 nC (typ) |
| Input Capacitance (Ciss) | 1.8 nF | — |
| 工作溫度範圍 | -55°C to +150°C | — |
| 封裝 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-6 (TDSON EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| 工作接面溫度 | — | -55°C to +150°C |
| MSL 等級 | — | 1 |