BSZ065N06LS5ATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSZ065N06LS5ATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ065N06LS5ATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 logic-level | OptiMOS 5 60 V trench-gate |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) Max | 65 A | — |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | — |
| Power Dissipation (PD) Max | 46 W | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V | 1.7 V (typ) |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V | 26 nC (typ) |
| Input Capacitance (Ciss) | 1.8 nF | — |
| Operating Temperature Range | -55°C to +150°C | — |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Operating Junction Temperature | — | -55°C to +150°C |
| MSL Level | — | 1 |