BSZ096N10LS5ATMA1 vs BSZ130N03LSGATMA1 比較

詳細並排比較 BSZ096N10LS5ATMA1 由 Infineon 與 BSZ130N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSZ096N10LS5ATMA1 BSZ130N03LSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity N-Channel —
Drain-Source Voltage (VDS max) 100 V —
Gate-Source Voltage (VGS max) 20 V (typical) —
Continuous Drain Current (ID, TC=25 °C) 40 A —
Maximum Silicon Drain Current (ID max) 62 A —
Pulse Drain Current (ID,pulse) 160 A —
On-Resistance RDS(on) max 9.6 mΩ at VGS=10 V —
Total Power Dissipation (Ptot, TC=25 °C) 69 W —
Gate Threshold Voltage VGS(th) Logic-level (low single-volt range) —
Diode Continuous Forward Current (IS) 40 A (TC=25 °C) —
Diode Forward Voltage (VSD) 0.85 V typ, 1.2 V max at IF=20 A —
封裝 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 °C to +150 °C (junction) -55 C to +150 C (junction)
Technology OptiMOS 5 trench MOSFET —
Gate Drive Logic-level compatible —
ESD Protection Yes (gate-integrated) —
RoHS 狀態 Compliant Compliant
Packaging Code ATMA1 (tape and reel) —
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
連續汲極電流 (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
MSL 等級 — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
無鹵素 — Yes
Qualification — Industrial / Commercial (non-automotive)

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