BTS3028SDLATMA1 vs BSS316NH6327XTSA1 比較
詳細並排比較 BTS3028SDLATMA1 由 Infineon 與 BSS316NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BTS3028SDLATMA1 | BSS316NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Smart Low-Side Power Switch | — |
| 拓撲 | 1:1 N-Channel, Single Channel | — |
| Load Supply Voltage Range | 2 V to 10 V | — |
| Continuous Drain Current (I_D) | 5 A | — |
| On-State Resistance (R_DS(on)) | 28 mΩ (typ at 25 °C, V_IN = 5 V) | — |
| Overvoltage Clamp | Yes (integrated) | — |
| Overtemperature Shutdown | Yes (integrated) | — |
| Current Limitation | Yes (integrated) | — |
| ESD Protection | Yes (integrated) | — |
| STATUS Feedback Pin | Yes | — |
| 工作溫度範圍 | -40 °C to +150 °C (T_j) | — |
| 封裝 | PG-TO252-3-11 (DPAK, 3-pin + tab) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| 工作接面溫度範圍 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| MSL 等級 | — | MSL1 (per JEDEC J-STD-020) |