EDB5432BEBH-1DAUT-F-D vs EDB2432B4MA-1DAUT-F-D 比較
詳細並排比較 EDB5432BEBH-1DAUT-F-D 由 Micron Technology 與 EDB2432B4MA-1DAUT-F-D 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron
EDB5432BEBH-1DAUT-F-D ✓ 啟用中Micron Technology
EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron
EDB2432B4MA-1DAUT-F-D ✓ 啟用中規格比較
| 參數 | EDB5432BEBH-1DAUT-F-D | EDB2432B4MA-1DAUT-F-D |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Mobile LPDDR2 SDRAM | Volatile Memory - DRAM |
| 記憶體容量 | 512 Mbit | 2 Gbit (64M x 32) |
| 組織 | 16M x 32 | 64M x 32 |
| Clock Frequency | 533 MHz | 533 MHz |
| Supply Voltage Range | 1.14 V to 1.95 V | — |
| Core Voltage | 1.2 V (typical, LPDDR2) | — |
| 介面 | Parallel | Parallel |
| 封裝 | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10 x 11.5 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | Automotive | — |
| Terminals | 134 balls | — |
| Terminal Form | Ball (VFBGA) | — |
| Package Shape | Rectangular | — |
| RoHS Code | Yes (D suffix, lead-free) | — |
| Part Life Cycle Code | Active | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +125C (Automotive) |
| Access Time / CAS Latency | [DATA_NEEDED: CAS latency] | — |
| Standard Qty per Reel/Tray | [DATA_NEEDED: packaging standard quantity] | — |
| Technology | — | SDRAM - Mobile LPDDR2 |
| Package Construction | — | DDP (Double-Die Package) |
| Marking Code | — | D9WVG |
| Part Status | — | Active |
| Lead-Free Status | — | Lead free (-F suffix) |
| Halogen-Free Status | — | Halogen free (-F suffix) |
| 供應電壓 | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |
| Write Cycle Time - Word, Page | — | [DATA_NEEDED: write cycle time] |