EP3SE260F1152C3N vs EP3SE260F1152C2N 比較
詳細並排比較 EP3SE260F1152C3N 由 Intel 與 EP3SE260F1152C2N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Intel
EP3SE260F1152C3N - Stratix III E FPGA, 255K LE, 744 I/O, 1152-FBGA | Intel
EP3SE260F1152C3N ✓ 啟用中規格比較
| 參數 | EP3SE260F1152C3N | EP3SE260F1152C2N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | Obsolete |
| Series | Stratix III E | Stratix III E |
| Logic Elements / Cells | 255,000 | — |
| Embedded Memory Bits | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| User I/O Count | 744 | — |
| 封裝 | 1152-BBGA, FCBGA | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Process Technology | 65 nm | 65 nm |
| Core Voltage | 1.1 V | — |
| 工作溫度 | 0 C to +85 C (Commercial) | [DATA_NEEDED: operating temperature grade] |
| Transceivers | Integrated high-speed transceivers | — |
| DSP Blocks | Yes (dedicated multiplier/accumulator) | — |
| Embedded Memory Type | TriMatrix (true dual-port, FIFO, ROM, RAM) | — |
| External Memory Support | DDR3, DDR2, QDR II+, RLDRAM II | — |
| Configuration Modes | AS, AP, PS, FPP, JTAG | — |
| Partial Reconfiguration | Supported | — |
| Programmable Power Technology | Yes (up to 50% dynamic power reduction) | — |
| RoHS 狀態 | Compliant | Compliant |
| Family | — | FPGA - Field Programmable Gate Array |
| Number of Logic Elements | — | 255000 |
| Number of LABs/CLBs | — | 10200 |
| Total Memory Bits | — | 16672768 |
| Number of I/O | — | 744 |
| Voltage - Supply | — | 1.1 V |
| 封裝 / 外殼 | — | 1152-BBGA, FCBGA |
| Maximum Frequency | — | 600 MHz |
| Supplier Device Package | — | 1152-FCBGA |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Lead Free | — | Yes (per EP3SE260F1152C2G comparison) |
| ECCN | — | [DATA_NEEDED: ECCN code] |
| Moisture Sensitivity | — | [DATA_NEEDED: MSL level] |