EP3SE260F1517C3N vs EP3SE260F1517I3N 比較
詳細並排比較 EP3SE260F1517C3N 由 Intel 與 EP3SE260F1517I3N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE260F1517C3N | EP3SE260F1517I3N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 最後購買 | Obsolete |
| Family | Stratix III E | Stratix® III E |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | — |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | — |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| 封裝 | 1517-BBGA (FCBGA) | 1517-ball FC-FBGA |
| Process Technology | 65 nm TSMC low-power CMOS | 65 nm |
| Speed Grade | C3 (commercial) | -3 (fastest) |
| 工作接面溫度 | 0 C to +85 C (commercial) | -40 °C to +100 °C |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Embedded Memory Bits | — | 16,672,768 bits |
| Logic Array Blocks (LABs) | — | 10,200 |
| User I/O Count | — | 976 |
| Core Voltage | — | 1.1 V |
| Temperature Grade | — | Industrial (I): -40 °C to +100 °C |
| Configuration Method | — | JTAG / Passive Serial / Active Serial |
| Lead-Free | — | Yes |
| Internal Logic Performance | — | Up to 500 MHz |
| Memory Subsystems | — | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers |
| DSP Blocks | — | Yes (dedicated multiply-accumulate) |