EPF10K250EBC600-3 vs EPF10K250EBI600-3 比較
詳細並排比較 EPF10K250EBC600-3 由 Intel 與 EPF10K250EBI600-3 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EPF10K250EBC600-3 | EPF10K250EBI600-3 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | Obsolete | 最後購買 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 LEs | 12,160 |
| Typical Gates | 250,000 | — |
| Maximum User I/O | 470 | 470 |
| Embedded Array Blocks (EABs) | 12 (each 2 Kbits) | — |
| Total Embedded Memory | 24 Kbits (RAM) | — |
| PLLs (Phase-Locked Loops) | 4 | — |
| Dedicated Clock Inputs | 6 | — |
| Speed Grade | -3 | -3 (fastest) |
| Core Supply Voltage | 3.3 V | — |
| I/O Supply Voltage | 3.3 V (5 V tolerant) | — |
| 封裝 | 600-ball FineLine BGA | 600-ball BGA (HBGA) |
| Configuration Mode | Passive Serial / Passive Parallel / JTAG | — |
| Boundary Scan | IEEE 1149.1 (JTAG) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] |
| Process Technology | SRAM-based CMOS | 0.22 µm CMOS, 4-layer metal |
| Typical Gate Count | — | 250,000 system gates |
| Embedded System Blocks (ESBs) | — | 12 |
| Dedicated Inputs | — | 4 |
| PLLs | — | 4 |
| On-chip RAM | — | Up to 40 Kbits |
| Ball Pitch | — | 1.93 mm |
| Core Voltage | — | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] |
| Configuration Method | — | SRAM, requires external configuration device (EPC series) |
| 安裝類型 | — | Surface Mount |
| RoHS 狀態 | — | Not specified (SnPb / tin-lead finish per legacy distributor listing) |
| Lead-free | — | no (legacy tin-lead per distributor description) |