H58G66CK8BX147N vs MT53E2G64D8TN-046 比較
詳細並排比較 H58G66CK8BX147N 由 SK hynix 與 MT53E2G64D8TN-046 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron
MT53E2G64D8TN-046 ✓ 啟用中規格比較
| 參數 | H58G66CK8BX147N | MT53E2G64D8TN-046 |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM | Mobile LPDDR4X SDRAM |
| Density | 64 Gbit (8 GB) | — |
| 組織 | x8 (single channel) | 2G x 64 |
| Maximum Data Rate | 8533 Mbps | — |
| Supply Voltage Domain | 0.5 V to 1.8 V | — |
| Core Voltage Class | 1.05 V (LPDDR5/LPDDR5X class) | — |
| 封裝 | 315-ball FBGA | 556-ball LFBGA (12.4 mm x 12.4 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Standard Compliance | JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification) | — |
| 介面 | LPDDR5/LPDDR5X protocol | Parallel |
| Channel Configuration | Single channel (x8 or x16 capable family) | — |
| Power Management | Dynamic voltage and frequency scaling (DVFSC/DVFSQ) | — |
| Application Domain | Smartphone, AI edge, server-class mobile computing | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh Scheme | LPDDR5 per-bank / all-bank refresh | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| 記憶體容量 | — | 128 Gbit (16 GB) |
| Clock Frequency | — | 2.133 GHz |
| Access Time | — | 3.5 ns |
| Speed Grade | — | -046 (4266 Mbps/pin) |
| Supply Voltage (VDD) | — | 1.1 V / 1.8 V (per variant) |
| Ball Pitch | — | [DATA_NEEDED: ball pitch] |
| Operating Temperature (AAT:C) | — | 0C to +95C |
| Operating Temperature (AIT:C) | — | -40C to +95C |
| Operating Temperature (AUT:C) | — | -40C to +105C |
| Automotive Qualification (AUT variant) | — | AEC-Q100 qualified |
| 資料匯流排寬度 | — | 64 bit |
| Write Cycle Time | — | 18 ns |