H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKIR 比較
詳細並排比較 H5AN4G8NBJR-RDC 由 SK hynix 與 H5AN4G8NBJR-VKIR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-RDC | H5AN4G8NBJR-VKIR |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| 組織 | 512M x 8 | 512M x 8 |
| 介面 | DDR4 (Double Data Rate IV) | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 供應電壓 | [DATA_NEEDED: VDD supply voltage] | — |
| 資料速率 | [DATA_NEEDED: speed grade Mbps] | 2666 Mbps per pin |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh interval specification] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS 狀態 | Lead-Free & Halogen-Free (RoHS Compliant) | — |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature (Industrial) | — | -40C to +85C (case) |
| Extended Temperature Range | — | +85C to +95C (case, per datasheet conditions) |
| Technology | — | CMOS DRAM |
| Product Family | — | H5AN4G4/6/8NBJR series |
| Speed Grade Code | — | -VKI |
| Packing Suffix | — | R (Tape & Reel) |
| VPP Supply | — | [DATA_NEEDED: VPP supply voltage] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |