H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory
MPN： H5AN4G8NBJR-RDC ✓ 啟用中H5AN4G8NBJR-RDC 概覽
A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock (double data rate) and communicates over a point-to-point or multi-drop command/address bus with the memory controller. Within the memory hierarchy, it sits as main system memory between CPU caches and mass storage, and is a member of the broader DRAM > synchronous DRAM > DDR SDRAM family tree, succeeding DDR3 with lower operating voltage, higher data rates, and bank-group architecture.
Key features include a 4Gb density organized as 512M words x 8 bits, an internal 8-bank and bank-group (x4/x8: 4 bank groups) architecture that increases effective data rate utilization, and DDR4-class low supply voltage for reduced system power. The device supports the standard DDR4 SDRAM command set including bank-group activation management, making it suitable for memory controllers with DDR4 scheduling.
Technical depth: the device uses a CMOS DRAM core with prefetch architecture per the JEDEC DDR4 specification, refreshed internally at standard intervals with self-refresh support for low-power standby. SSTL-12-style signaling on a separate VDD/VDDQ supply domain enables clean signal integrity at DDR4 data rates on the CA and DQ buses, controlled through on-die termination (ODT) and CA parity as defined by the DDR4 standard.
Typical applications include desktop and notebook main memory DIMMs and solder-down memory, consumer electronics such as set-top boxes and smart TVs, industrial controllers requiring large memory density, and networking/communication equipment needing high bandwidth per DRAM.
Design consideration: DDR4 signal integrity depends heavily on fly-by command/address routing, on-die termination settings, and ZQ calibration resistors; follow the memory controller layout guidelines and verify timing closure at the target data rate.
This page synthesizes datasheet references, drop-in alternatives, pricing tiers, and practical design notes not found in a single manufacturer datasheet.
直接替換替代品，適用於 H5AN4G8NBJR-RDC — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5AN4G8NBJR-RDC （相同外形與佔位） — 差異在於 Package, Data Rate, Interface, Speed Grade, RoHS Status.
H5AN4G8NBJR-PBC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G8NBJR-UHC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G8NBJR-VKC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G8NBJR-XXC
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M8RH-083E
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G8NBJR-RDC 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 4 Gbit |
| 組織 | 512M x 8 |
| 介面 | DDR4 (Double Data Rate IV) |
| 封裝 | 78-ball FBGA |
| 安裝類型 | Surface Mount |
| Bank Architecture | 8 banks with 4 bank groups (x8) |
| Refresh | Auto-refresh and self-refresh |
| Termination | On-Die Termination (ODT) |
| RoHS 狀態 | Lead-Free & Halogen-Free (RoHS Compliant) |
| Process Technology | CMOS |
| Manufacturer | SK hynix |
| Family Series | H5AN4G4/8/6NBJR |
H5AN4G8NBJR-RDC 78-ball fbga 腳位配置指南
H5AN4G8NBJR-RDC（78-ball fbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5AN4G8NBJR-RDC.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5AN4G8NBJR-RDC 適用於 6 應用s: PC and Notebook Main Memory, Consumer Electronics (Set-Top Box, Smart TV), Industrial Controllers and HMI, Networking and Communication Equipment, Embedded Graphics and Display Systems, Test and Measurement Instruments.
PC and Notebook Main Memory
The H5AN4G8NBJR-RDC is designed primarily as main system memory in desktop, notebook, and all-in-one PC platforms. Its 4Gb density organized as 512M x 8 allows eight devices to populate a 64-bit unbuffered DIMM channel for 4GB-per-rank configurations. DDR4 bank-group architecture (4 bank groups x 8 banks on x8 devices) sustains high effective bandwidth by allowing back-to-back activations in different groups, matching CPU prefetch patterns. Designers should enable on-die termination and follow fly-by CA routing per DDR4 module reference designs; the lead-free, halogen-free FBGA construction supports RoHS-compliant consumer builds.
推薦
Consumer Electronics (Set-Top Box, Smart TV)
Consumer DDR4 designs such as set-top boxes, smart TVs, and game consoles use solder-down 78-ball FBGA DRAMs like the H5AN4G8NBJR-RDC next to SoCs with integrated DDR4 controllers. The 4Gb x8 organization pairs well with SoCs that support 32-bit or 64-bit DDR4 buses, giving 2-8 GB of system memory with only 4-16 devices. The consumer C-grade bin balances cost and power at 1.2V-class operation, and self-refresh retains content during low-power standby modes. PCB designers should follow the SoC vendor's DDR4 SI guidelines: matched DQ/DM/DQS per byte lane, VTT termination rails, and ZQ calibration resistor placement.
推薦
Industrial Controllers and HMI
Industrial automation controllers, HMIs, and edge gateways need large memory density and bandwidth for buffering fieldbus traffic, running Linux, and logging data. The H5AN4GxNBJR family is available in industrial -I grade bins (per the series datasheet), and the -RDC consumer bin serves cost-sensitive industrial variants. DDR4's lower 1.2V supply reduces dissipation in sealed, fanless enclosures compared to DDR3 designs. Soldered FBGA memory also improves vibration reliability versus socketed SODIMMs. Designers must confirm the -RDC bin's temperature rating, or select the -xxI industrial variant where -40C to +85C ambient operation is required.
推薦
Networking and Communication Equipment
Routers, switches, and access points require high-bandwidth main memory for packet buffering and control-plane software. The H5AN4G8NBJR-RDC provides 4Gb per device, and x8 devices can be byte-laned across a 64-bit bus to sustain multi-Gbps throughput, with bank-group interleaving reducing effective latency for random packet access patterns. The DDR4 CA parity feature improves command-bus error resilience on long fly-by traces typical of switch PCBs. Octopart showed 34,000 pcs of family stock (July 2026), but 2026 DDR4 supply constraints make dual-sourcing with Micron MT40A512M8RH-083E prudent for networking BOMs.
推薦
Embedded Graphics and Display Systems
Embedded graphics processors and display SoCs use 4Gb x8 DDR4 devices such as the H5AN4G8NBJR-RDC as frame buffer and texture memory. The DDR4 data rate supports the write bandwidth needed for high-resolution frame updates (e.g., 4K display pipelines), while on-die termination maintains signal integrity on the shared video-memory bus. The x8 organization provides per-byte data masking (DM), which is efficient for partial-frame and GUI-layer updates. Layout should keep each DQS/DQ byte lane length-matched within controller specification, and refresh scheduling should be coordinated with the graphics controller to avoid visual jitter under load.
推薦
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators embed DDR4 SDRAM like the H5AN4G8NBJR-RDC as deep acquisition memory. The 4Gb density supports long waveform records; x8 byte-lane organization with DM enables efficient, unmasked contiguous capture, while DDR4 bank-group architecture sustains streaming write bursts from high-speed acquisition ASICs. Design considerations include careful DQS gating calibration at the controller, ECC options (with additional x8 devices providing SECDED on instrument platforms), and thermal margining since instruments operate in enclosed chassis. Self-refresh supports post-trigger data retention through instrument standby states.
推薦
推薦產品摘要
工程參考資料，適用於 H5AN4G8NBJR-RDC — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5AN4G8NBJR-PBC | H5AN4G8NBJR-VKC | MT40A512M8RH-083E |
|---|---|---|---|---|
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Memory Interface | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| RoHS / Lead-Free | Lead-Free & Halogen-Free (RoHS Compliant) | RoHS compliant (family) | RoHS compliant (family) | RoHS compliant |
主要差異化特點
- Newest C-generation silicon in family (對比H5AN4G8NBJR-PBC)
- Higher data-rate headroom vs Micron cross (對比MT40A512M8RH-083E)
- Green package compliance (對比Generic DDR4 parts)
設計說明
DDR4 x8 buses carry data at the controller's data rate on DQ/DQS/DM lanes and command/address on a fly-by CA bus. Keep each DQS-DQ byte lane length-matched to the controller specification, route VTT termination with adequate decoupling near each DRAM, and place the ZQ calibration resistor (240 ohm, 1%) within the datasheet-specified trace length of the ZQ ball. Use on-die termination (ODT) settings from the controller's training algorithm rather than fixed register values for first-pass margin.
Separate VDD, VDDQ, and VPP supply domains per the DDR4 standard with local bulk capacitance (e.g., 470uF per domain on a multi-device bus) plus 0.1uF per power/ground ball pair. Estimated: a 4Gb x8 DDR4 at 2400 Mbps with roughly 10mA per DQ switching at 1.2V can draw on the order of hundreds of mW per device active - verify against the datasheet IDD tables for your data rate and utilization, and size the VTT rail for peak ODT current.
Do not assume suffix interchangeability: within the H5AN4G8NBJR family, the two letters after 'BJR-' encode silicon generation, speed, and temperature bin, and memory controllers validate these via training and SPD data. Substituting a -RDC with a -VKC (DDR4-2666) is generally safe in one direction (faster bin on a slower setting) but never the reverse. Also confirm consumer (C) vs industrial (I) temperature grading before releasing industrial BOMs.
For solder-down FBGA designs, prefer six-layer or more PCBs with dedicated DDR4 power planes, fan out the 78 balls with via-in-pad or dog-bone escapes per SK hynix package layout guidelines, and avoid routing DDR4 signals across plane splits. Keep impedance-controlled 40-ohm DQ/CA traces and reference them to a continuous ground plane; this family is mechanically footprint-compatible across the H5AN4G4/8/6NBJR variants, enabling layout reuse across density and width options.
合規資訊
Datasheet listings describe the H5AN4G8NBJR family as Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in provided data.