H5AN8G6NAFR-PBC vs H5AN8G6NCJR-PBC 比較
詳細並排比較 H5AN8G6NAFR-PBC 由 SK hynix 與 H5AN8G6NCJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NAFR-PBC | H5AN8G6NCJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 組織 | 512M x 16 | — |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| 介面類型 | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| 封裝 | TFBGA-96 (rectangular) | FBGA-96 (96-ball fine-pitch BGA) |
| Number of Terminals | 96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Composition | CMOS | — |
| Memory Organization | — | 8Gb x16 (512M x 16) |
| 記憶體容量 | — | 8 Gbit |
| 資料速率 | — | [DATA_NEEDED: exact speed grade of -PBC suffix] |
| Family Data Rate Range | — | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) |
| Supply Voltage (VDD) | — | 1.2 V |
| 介面 | — | Parallel, synchronous to both clock edges |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) |