H5AN8G8NAFR-RDC vs H5AN8G6NAFR-RDC 比較
詳細並排比較 H5AN8G8NAFR-RDC 由 SK hynix 與 H5AN8G6NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NAFR-RDC | H5AN8G6NAFR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 組織 | 1G x 8 (x8) | 512M x 16 |
| 介面 | DDR4 (Double Data Rate 4) | DDR4 (JEDEC-standard) |
| Speed Grade | -RDC (DDR4-2666 class) | -RDC (see datasheet for bin timing) |
| 資料速率 | 2666 MT/s (per -R speed grade suffix) | — |
| Core Supply Voltage (VDD) | 1.2 V | — |
| I/O Supply Voltage (VDDQ) | 1.2 V | — |
| Wordline Supply (VPP) | 2.5 V | — |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) | — |
| Burst Length | 8 (BL8) | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| 封裝 | 78-ball FBGA | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating Temperature range] | [DATA_NEEDED: operating temperature range] |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Memory Density | — | 8 Gb |
| 供應電壓 | — | 1.2 V |
| Access Mode | — | Multi Bank Page Burst |
| Package Code | — | TFBGA |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing) |
| Technology | — | CMOS |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Max Clock Rate | — | [DATA_NEEDED: max clock rate for -RDC bin] |