H5ANAG8NAMR-UHC vs H5ANAG8NCMR-VKC 比較

詳細並排比較 H5ANAG8NAMR-UHC 由 SK hynix 與 H5ANAG8NCMR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG8NAMR-UHC H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC ✓ 啟用中
SK hynix
H5ANAG8NCMR-VKC H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC ✓ 啟用中

規格比較

參數 H5ANAG8NAMR-UHC H5ANAG8NCMR-VKC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Manufacturer SK Hynix —
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
組織 2G x 8 —
資料速率 DDR4-2400 (2400 MT/s) 2666 Mbps/pin (DDR4-2666)
供應電壓 1.2 V —
封裝 FBGA-78 FBGA-78
安裝類型 Surface Mount Surface Mount
介面 Parallel, DDR4 —
Bank Group Architecture DDR4 bank-group architecture —
On-Die Termination (ODT) Yes —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Self-refresh and auto-refresh (DDR4) —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
RoHS 狀態 Compliant (lead-free FBGA package) [DATA_NEEDED: RoHS status]
Applications Data storage, firmware boot, industrial controllers, computing modules —
記憶體容量 — 16 Gb
Memory Organization — 2G x 8
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Speed Grade — VK (per SK hynix speed-bin suffix)
Power Class — Normal Power
Bank Groups — 4
Banks Total — 16
CAS 延遲 — [DATA_NEEDED: CAS latency for VK speed bin]
Packaging — [DATA_NEEDED: standard packing quantity]
Manufacturer Process — CMOS DRAM

資料表與資源

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