H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix
MPN： H5ANAG8NAMR-UHC ✓ 啟用中H5ANAG8NAMR-UHC 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR memory family. Within the memory hierarchy, a DRAM component such as this part sits at the main-memory level of a computing system, below CPU caches and above storage. Unlike NAND flash, DRAM is volatile and requires periodic refresh, but delivers far lower random-access latency and high bandwidth, making it the standard main-memory technology from embedded controllers to servers.
Key features of the H5ANAG8NAMR-UHC include a 16Gbit density organized as 2G words of 8 bits, a 2400 MT/s interface, and the reduced 1.2V core supply that distinguishes DDR4 from the 1.5V DDR3 generation. DDR4 devices also bring bank-group architecture, which interleaves four internal bank groups to raise effective data rates, plus lower operating currents per transferred bit than previous generations.
Technically, this part belongs to SK Hynix DDR4 DRAM component family (the AG8N denotes 16Gb x8 organization within the A-generation die family). Speed grade and voltage class are encoded in the -UHC suffix, which corresponds to DDR4-2400 operation at 1.2V. The 78-ball FBGA (Fine-Pitch Ball Grid Array) lead-free package is the JEDEC-standard footprint shared across most 16Gb x8 DDR4 components, which simplifies second-source qualification. Interface signals include differential clocking (CK/CK#), DQS strobes for data capture, and on-die termination (ODT) to preserve signal integrity at multi-gigabit rates.
Typical applications include DRAM modules and DIMMs, industrial controllers and computing modules requiring main memory, networking and communication equipment, and embedded systems performing firmware boot and data logging in volatile memory. The x8 organization suits designs that need many independent chips or ECC-enabled subsystems (8D72 configurations).
A key design consideration: DDR4-2400 operation requires careful address/command bus fly-by routing, per-byte DQS trace-length matching, and correct ODT/ZQ calibration in the memory controller configuration.
This page synthesizes distributor availability, drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet, giving engineers and buyers a single citable reference.
直接替換替代品，適用於 H5ANAG8NAMR-UHC — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5ANAG8NAMR-UHC （相同外形與佔位） — 差異在於 Package, RoHS Status, Data Rate, Interface, Refresh.
H5ANAG8NCJR-XNC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5ANAG8NBJR-VKC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5ANAG8NBJR-RDC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5ANAG8NBJR-PBC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT40A2G8AG-062E
✅ 直接替換聯絡詢價
查看資料表 →K4AAG085WA-BCWE
✅ 直接替換聯絡詢價
查看資料表 →K4AAG165WA-BCRC
✅ 直接替換聯絡詢價
查看資料表 →H5ANAG8NAMR-UHC 最大額定值與電氣特性
| Manufacturer | SK Hynix |
| 記憶體類型 | DDR4 SDRAM |
| Density | 16 Gbit |
| 組織 | 2G x 8 |
| 資料速率 | DDR4-2400 (2400 MT/s) |
| 供應電壓 | 1.2 V |
| 封裝 | FBGA-78 |
| 安裝類型 | Surface Mount |
| 介面 | Parallel, DDR4 |
| Bank Group Architecture | DDR4 bank-group architecture |
| On-Die Termination (ODT) | Yes |
| Refresh | Self-refresh and auto-refresh (DDR4) |
| RoHS 狀態 | Compliant (lead-free FBGA package) |
| Applications | Data storage, firmware boot, industrial controllers, computing modules |
H5ANAG8NAMR-UHC fbga-78 腳位配置指南
H5ANAG8NAMR-UHC（fbga-78 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5ANAG8NAMR-UHC.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5ANAG8NAMR-UHC 適用於 6 應用s: Industrial Controllers, Computing Modules and SBCs, Storage Systems and SSD Controllers, Networking and Communication Equipment, Firmware Boot and Embedded Logging, Memory Modules (DIMM) Replacement Sourcing.
Industrial Controllers
Industrial controllers and PLC-class systems require dense, reliable main memory for control loops, recipe storage, and network buffers. The H5ANAG8NAMR-UHC fits with its 16Gb (2G x 8) DDR4 organization, DDR4-2400 interface, and 1.2V supply that lowers system power versus DDR3 main memory. In a typical design, two to four of these components hang on a fly-by-routed address/command bus behind an industrial SoC or FPGA memory controller. The x8 organization supports ECC (72-bit bus with 8 extra bits per 64), which is essential for long-duty-cycle industrial uptime. Layout effort centers on DQS-DQ per-byte matching and ODT calibration rather than external termination networks.
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Computing Modules and SBCs
Computer-on-modules and single-board computers use commodity DDR4 components soldered directly on-module to avoid SO-DIMM sockets. The H5ANAG8NAMR-UHC provides 16Gb per package, so two components yield 4GB of 64-bit main memory. Its DDR4-2400 rate matches mainstream embedded SoC memory controllers, and the JEDEC 78-ball x8 footprint allows second sources like MT40A2G8AG-062E without PCB respin. Designers should verify SPD contents or hard-code timing tables in the bootloader, and honor per-byte length matching within the module's signal-integrity budget to sustain 2400 MT/s reliably across temperature.
推薦
Storage Systems and SSD Controllers
Enterprise and industrial storage controllers buffer mapping tables and write queues in DDR4 DRAM. The H5ANAG8NAMR-UHC offers 16Gb in one x8 package, letting controller boards scale buffer capacity by stacking components rather than selecting rare high-density parts. At DDR4-2400, a single x8 channel delivers up to 19.2 Gb/s, sufficient to keep DRAM-to-controller read-modify-write traffic off the flash bottleneck. The 1.2V supply simplifies the power tree on dense SSD boards. Designers should budget refresh current and enable controller-side ECC or rely on the DDR4 link-level features for data integrity during long uptime windows.
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Networking and Communication Equipment
Switches, routers, and telecom line cards use deep packet buffers and flow tables that demand high-bandwidth volatile memory. The H5ANAG8NAMR-UHC at DDR4-2400 provides deterministic latency after controller training, and its x8 organization allows 64-bit or 72-bit ECC buses assembled from eight or nine components. The 78-ball FBGA footprint is the JEDEC DDR4 standard, so qualification spans SK Hynix, Micron, and Samsung equivalents for supply-chain resilience. Signal-integrity work dominates the design: ODT settings, ZQ calibration resistors, and fly-by clock routing must be tuned per board to hold timing margins across the full temperature range.
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Firmware Boot and Embedded Logging
Embedded systems use DDR4 as runtime memory for decompressed firmware images, RTOS heaps, and rotating event logs before persistence. The H5ANAG8NAMR-UHC's 16Gb capacity comfortably hosts Linux-class images plus logging buffers, while DDR4-2400 shortens decompression and boot phases versus DDR3 designs. During self-refresh, the component retains log data through low-power states, letting systems checkpoint efficiently. The 1.2V interface eases battery-backed and fanless designs. Engineers must configure the memory controller's refresh rate per the datasheet's temperature-dependent requirements, since extended operating temperatures accelerate the required refresh interval.
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Memory Modules (DIMM) Replacement Sourcing
Module makers and repair depots source bare DDR4 components like the H5ANAG8NAMR-UHC to rework DIMMs and to build custom ECC UDIMMs. Because it is a 16Gb x8 DDR4-2400 die in the standard 78-ball FBGA footprint, it matches the component population of mainstream DDR4-2400 unbuffered modules. When reballing or replacing DRAM on a module, technicians should re-verify the SPD data programmed on the module EEPROM, since the controller reads timing from SPD rather than from the DRAM die itself. Pairing components from the same date/fab lot minimizes training marginality across mixed populations.
推薦
推薦產品摘要
工程參考資料，適用於 H5ANAG8NAMR-UHC — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5ANAG8NCJR-XNC | H5ANAG8NBJR-VKC | MT40A2G8AG-062E | K4AAG085WA-BCWE |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Standard | DDR4 SDRAM (JEDEC DDR4 interface) | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Drop-in Compatibility | Reference part (JEDEC DDR4 x8 78-ball map) | Pin-to-pin, same footprint | Pin-to-pin, same footprint | Pin-to-pin, same footprint | Pin-to-pin, same footprint |
主要差異化特點
- Native DDR4-2400 speed grade (對比H5ANAG8NBJR-PBC)
- Same footprint with newer die generation (對比H5ANAG8NCJR-XNC)
- Cross-brand supply resilience at identical footprint (對比MT40A2G8AG-062E)
設計說明
DDR4-2400 (1200 MHz) demands disciplined routing: address/command lines use fly-by topology terminated to VTT, while each data byte group (DQ0-DQ7 with its DQS/DQS# pair) must be length-matched within roughly +/-25 mils per controller vendor guidance. Simulate the DDR4 channel (IBIS-AMI models from SK Hynix) before committing the PCB stack-up, and budget ODT settings for your specific trace impedance (typically 40-50 ohm single-ended). At 2400 MT/s, write-leveling and read-training in the controller are mandatory on every power-up.
Estimate: a 16Gb DDR4-2400 x8 component draws core, termination, and I/O current from separate 1.2V (VDD), 1.2V (VDDQ) and 0.6V VTT rails. Budget VTT peak current carefully - termination current scales with the number of DDR4 devices on the bus and can exceed a few amps on an 8-device 72-bit bus during simultaneous switching. Place bulk decoupling near the VTT regulator and 0.1 uF ceramics at each power ball. Include DRAM refresh current in thermal estimates for high-temperature operation.
The most common DDR4 design error is copying a DDR3 layout checklist: DDR4 adds ACT# (activation command), bank-group address pins (BG0/BG1), and 2N/bank-group timing modes that do not exist in DDR3. Also verify ZQ calibration resistor placement (240 ohm 1% to VSS) and never share the ZQ ball network between devices. When substituting alternate suppliers (Micron/Samsung), update controller timing registers and SPD contents - density and organization may match while AC timing derating points differ.
合規資訊
RoHS compliance and lead-free finish inferred from current SK Hynix FBGA DDR4 manufacturing as listed in verified distributor data; REACH, halogen-free and conflict-minerals status should be confirmed on official SK Hynix environmental certificates.
