H5ANAG8NCR-RDC vs H5ANAG8NCMR-VKC 比較

詳細並排比較 H5ANAG8NCR-RDC 由 SK hynix 與 H5ANAG8NCMR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG8NCR-RDC H5ANAG8NCR-RDC - DDR4 SDRAM 16Gb 2Gx8 1.2V | SK hynix

H5ANAG8NCR-RDC - DDR4 SDRAM 16Gb 2Gx8 1.2V | SK hynix

H5ANAG8NCR-RDC ✓ 啟用中
SK hynix
H5ANAG8NCMR-VKC H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC ✓ 啟用中

規格比較

參數 H5ANAG8NCR-RDC H5ANAG8NCMR-VKC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
組織 2G x 8 —
Supply Voltage (VDD) 1.2 V 1.2 V
封裝 78-ball FBGA FBGA-78
安裝類型 Surface Mount Surface Mount
介面 DDR4 (fully synchronous, both clock edges) —
Family H5ANAG8N 16Gb DDR4 —
Application Segment Main memory (server, networking, industrial, embedded) —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Max Data Rate [DATA_NEEDED: speed bin data rate in MT/s] —
CAS 延遲 [DATA_NEEDED: CAS latency] [DATA_NEEDED: CAS latency for VK speed bin]
Bank Groups [DATA_NEEDED: bank/bank group count] 4
Refresh [DATA_NEEDED: refresh specification] —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
記憶體容量 — 16 Gb
Memory Organization — 2G x 8
資料速率 — 2666 Mbps/pin (DDR4-2666)
I/O Voltage (VDDQ) — 1.2 V
Speed Grade — VK (per SK hynix speed-bin suffix)
Power Class — Normal Power
Banks Total — 16
Packaging — [DATA_NEEDED: standard packing quantity]
Manufacturer Process — CMOS DRAM

資料表與資源

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