H5ANAG8NCR-RDC - DDR4 SDRAM 16Gb 2Gx8 1.2V | SK hynix
MPN： H5ANAG8NCR-RDC ✓ 啟用中H5ANAG8NCR-RDC 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory standard and sits within the broader DRAM -> synchronous DRAM -> volatile memory hierarchy. Compared to DDR3, DDR4 reduces operating voltage by roughly 20% (from 1.5V to 1.2V), increases bank count, and enables higher data rates per device, which is why it became the dominant main memory for servers, workstations, and networking equipment.
Key characteristics of the H5ANAG8N family include the 16Gb single-die density, x8 organization enabling ECC-based server architectures (8 of 9 chips plus ECC parity on RDIMM designs), 1.2V VDD operation for reduced power, and a JEDEC-standard 78-ball FBGA footprint for drop-in board-level compatibility across speed grades. The -RDC suffix identifies a specific speed bin and operating-temperature rating within the family.
Architecturally, the device is fully synchronous: addresses, commands, and control inputs are registered on clock edges, and internal bank-group parallelism sustains high effective bandwidth. SK hynix states its 16Gb DDR4 delivers up to 3200 MT/s while consuming 20% less operating voltage than DDR3.
Typical applications include server DIMM modules (RDIMM/LRDIMM x8 population with ECC), networking and telecom line cards, industrial embedded controllers, and storage systems that still source DDR4 components for stable long-term supply.
Design consideration: DRAM speed-bin suffixes (e.g., -RDC versus -VKC versus -XNC) define maximum data rate and AC timing; verify the memory controller supports the target speed bin and that termination and trace-length matching follow the DDR4 routing guidelines.
This page synthesizes distributor data, same-family drop-in alternatives, and application guidance beyond the raw datasheet.
直接替換替代品，適用於 H5ANAG8NCR-RDC — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5ANAG8NCR-RDC （相同外形與佔位） — 差異在於 Package, Data Rate, Interface, RoHS Status, Memory Size.
H5ANAG8NCJR-XNC
✅ 直接替換✓ 有庫存
$65.625 / 單位
查看資料表 →H5ANAG8NCMR-VKC
✅ 直接替換聯絡詢價
查看資料表 →H5ANAG8NAMR-UHC
✅ 直接替換聯絡詢價
查看資料表 →H5ANAG8NBJR-RDC
✅ 直接替換聯絡詢價
查看資料表 →H5ANAG8NCMR-RDC
✅ 直接替換📋 參考替代品（不在目錄中）
H5ANAG8NCR-RDC 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 16 Gbit |
| 組織 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V |
| 封裝 | 78-ball FBGA |
| 安裝類型 | Surface Mount |
| 介面 | DDR4 (fully synchronous, both clock edges) |
| Family | H5ANAG8N 16Gb DDR4 |
| Application Segment | Main memory (server, networking, industrial, embedded) |
H5ANAG8NCR-RDC 78-ball fbga 腳位配置指南
H5ANAG8NCR-RDC（78-ball fbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5ANAG8NCR-RDC.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5ANAG8NCR-RDC 適用於 6 應用s: Server RDIMM Main Memory, Networking and Telecom Line Cards, Industrial Embedded Controllers, Storage Systems and SSD Controllers, Test and Measurement Instruments, Aerospace and Rugged Embedded Computing.
Server RDIMM Main Memory
The H5ANAG8NCR-RDC's 16Gb density and x8 organization make it a primary building block for ECC-protected server memory modules. RDIMM designs populate x8 DDR4 chips alongside registered clock drivers and data buffers, so 2G x 8 parts map directly onto standard module topologies. At 1.2V, power per bit drops roughly 20% versus DDR3 at equal workloads, reducing thermal load in dense 1U/2U servers. Designers must match the -RDC speed bin to the memory controller's supported data rate and validate refresh and ZQ calibration timing per the SK hynix datasheet.
推薦
Networking and Telecom Line Cards
Switch, router, and telecom line cards use x8 DDR4 components such as the H5ANAG8NCR-RDC for packet buffering, flow tables, and control-plane memory. The 16Gb single-die density allows high buffer capacity with fewer devices, simplifying routing on high-layer-count boards. Fully synchronous operation on both clock edges sustains the bandwidth these platforms require. Because the 78-ball FBGA footprint is common across SK hynix 16Gb DDR4 speed grades, designers can dual-source within the family by adjusting only speed-bin constraints and controller training parameters.
推薦
Industrial Embedded Controllers
Industrial PCs, motion controllers, and machine-vision systems that still specify DDR4 use the H5ANAG8NCR-RDC where main memory density and a stable long-term supply matter more than absolute latest-generation performance. SK hynix positions its 16Gb DDR4 explicitly for industrial and embedded platforms. The 1.2V rail integrates easily with standard industrial power trees, and the -RDC temperature rating supports industrial environments. Engineers should pre-position inventory and validate at least one same-family alternate suffix given DDR4's phase-out trajectory.
推薦
Storage Systems and SSD Controllers
Enterprise storage arrays and high-end SSD controllers use 16Gb DDR4 DRAM such as the H5ANAG8NCR-RDC for mapping tables, write caches, and metadata. The 2G x 8 organization fits 64-bit-plus-ECC bus topologies typical of storage ASICs, and 16Gb density reduces component count versus stacking lower-density dies. Latency consistency and refresh behavior defined in the SK hynix datasheet are the key validation points, since storage firmware often depends on bounded worst-case DRAM access timing.
推薦
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with predictable latency; 16Gb DDR4 components like the H5ANAG8NCR-RDC provide that depth at 1.2V power levels compatible with instrument thermal budgets. The JEDEC-standard 78-ball FBGA footprint simplifies second-sourcing across SK hynix die revisions, and the family's 3200 MT/s-class bandwidth supports high-throughput streaming acquisition engines. Calibration routines should account for the -RDC speed bin's AC parameters as documented by SK hynix.
推薦
Aerospace and Rugged Embedded Computing
Rugged embedded and aerospace compute modules use DDR4 components for main memory where supply continuity and documented revision control are critical. The H5ANAG8NCR-RDC's commodity JEDEC footprint allows standard memory-controller integration while its family structure supports lock-down on a single die revision for qualification. Thermal derating per the -RDC temperature rating must be verified against the enclosure's conduction-cooled design. Buyers in this segment typically secure last-time-buy inventory of 16Gb DDR4 as the industry transitions to DDR5.
推薦
推薦產品摘要
工程參考資料，適用於 H5ANAG8NCR-RDC — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5ANAG8NCJR-XNC | H5ANAG8NCMR-VKC | H5ANAG8NAMR-UHC | H5ANAG8NBJR-RDC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Die Revision | C family (RDC suffix) | C family, XNC bin | CM die revision, VKC bin | AM die revision, UHC bin | BJ die revision, RDC bin |
主要差異化特點
- 16Gb single-die density reduces component count (對比H5ANAG8NAMR-UHC)
- x8 organization enables ECC server topologies (對比H5ANAG6NCJR-XNC)
- 1.2V DDR4 operation cuts power vs DDR3 (對比H5ANAG8NCMR-VKC)
設計說明
DDR4 fly-by routing requires careful trace-length matching across address/command lines and per-byte length matching for DQ/DQS pairs. Follow the SK hynix DDR4 design guide and your memory controller's layout checklist: maintain controlled impedance, use on-die termination (ODT) settings from the datasheet's timing tables for the -RDC speed bin, and simulate eye diagrams at the target data rate before committing the board.
The H5ANAG8NCR-RDC runs from a 1.2V VDD rail with separate VPP requirements typical of DDR4. Size VTT termination regulators for peak termination current across all populated ranks, and decouple each FBGA power ball with low-ESR ceramics placed close to the device. Estimated: dynamic current scales with data rate, so verify rail droop during simultaneous read/write burst patterns at the maximum controller speed.
Die revisions within the H5ANAG8N family (AM, BJ, CM, C) can differ in AC timing margins and refresh details even at the same suffix. When qualifying a board, lock the approved die revision or re-run memory training and burn-in whenever a substitution occurs. Also verify the -RDC bin against your controller's supported speed list; mixing speed bins across ranks on one channel forces the entire channel to the slower bin.
合規資訊
Compliance status was not stated in the verified web data; confirm via SK hynix product page or distributor compliance documents.