H5TC4G63AFR-PBI vs H5TC4G63AFR-PBR 比較

詳細並排比較 H5TC4G63AFR-PBI 由 SK hynix 與 H5TC4G63AFR-PBR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR ✓ 啟用中

規格比較

參數 H5TC4G63AFR-PBI H5TC4G63AFR-PBR
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 Obsolete 啟用中
單價 (USD) — $5.91
記憶體類型 DDR3L SDRAM DDR3L SDRAM
組織 256M x 16 256M x 16
Total Memory Size 4 Gb —
資料速率 DDR3-1600 (PC3L-12800) 1600 Mbps (PC3L-12800)
供應電壓 1.35 V 1.35V (1.5V compatible)
Number of Banks 8 8
Burst Length 8 (BL8) 8 (BL8) with burst chop (BC4)
CAS 延遲 Programmable 11
On-Die Termination (ODT) Yes —
Refresh Period 7.8 us at 85°C —
工作溫度範圍 -40°C to +95°C —
封裝 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-ball FBGA (PBGA96)
安裝類型 Surface Mount —
Number of Terminals 96 —
RoHS 狀態 Compliant —
Total Capacity — 4Gb
tRCD/tRP — 11
Clock Frequency — 800 MHz
tCK — 1.25 ns
tRCD — 13.125 ns
Refresh Interval — 7.8us at 85C, 3.9us at 95C
Package Dimensions — 13.5mm x 9.0mm
Ball Pitch — 0.8mm
I/O Interface — SSTL-15
工作溫度 — 0C to +95C
RoHS — Compliant
Lead-Free — Yes
無鹵素 — Yes

資料表與資源

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