IAUC100N04S6L020ATMA1 vs IAUCN04S7N006ATMA1 比較

詳細並排比較 IAUC100N04S6L020ATMA1 由 Infineon 與 IAUCN04S7N006ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ 啟用中
Infineon
IAUCN04S7N006ATMA1 IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 ✓ 啟用中

規格比較

參數 IAUC100N04S6L020ATMA1 IAUCN04S7N006ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 OptiMOS 5 (trench)
工作溫度範圍 -55 °C to +175 °C (TJ) -55 C to +175 C
封裝 PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8-43
安裝類型 Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) —
RoHS 狀態 Compliant —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) — 175 A
On-State Resistance (RDS(on)) — 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Junction Temperature Max — 175 C
Power Dissipation Max (Pd) — [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) — [DATA_NEEDED: Qg total]
Automotive Qualification — AEC-Q101
Lead-Free / RoHS — Yes (compliant)
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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