IAUC100N04S6L025ATMA1 vs IAUC100N04S6L014ATMA1 比較

詳細並排比較 IAUC100N04S6L025ATMA1 由 Infineon 與 IAUC100N04S6L014ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ 啟用中
Infineon
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 ✓ 啟用中

規格比較

參數 IAUC100N04S6L025ATMA1 IAUC100N04S6L014ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 6 40V trench MOSFET OptiMOS 6
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-State Resistance RDS(on) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Power Dissipation (PD) at TC=25C 62 W —
工作接面溫度 -55 C to +175 C —
封裝 PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8 (SuperSO8, 5x6 mm)
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
MSL 等級 1 (per JEDEC J-STD-020) 1
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Family — IAUC / OptiMOS 6 40V
電晶體類型 — N-Channel MOSFET
Mode — Enhancement
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) max (V_GS=10V) — 1.4 mOhm
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G typical]
Power Dissipation (P_D, Tc) — 100 W
工作溫度範圍 — -55C to +175C
AEC-Q101 Qualification — Yes
Packaging — Tape & Reel (ATMA1 suffix)

資料表與資源

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