IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
MPN： IAUC100N04S6L014ATMA1 ✓ 啟用中IAUC100N04S6L014ATMA1 概覽
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or modulate current in power-conversion circuits. As an N-channel enhancement-mode device, the IAUC100N04S6L014 turns on when V<sub>GS</sub> exceeds the threshold, conducting current from drain to source with very low conduction loss. In the broader taxonomy, this part belongs to: power MOSFET -> discrete semiconductor -> power management component -> semiconductor device.
Key features include 40 V drain-source breakdown voltage (V<sub>DS</sub>), 100 A continuous drain current at case temperature, 1.4 mOhm maximum on-resistance (R<sub>DS(on)</sub>) at V<sub>GS</sub>=10 V, low gate charge Q<sub>G</sub> typical of OptiMOS 6, and 100 W maximum power dissipation. The SuperSO8 5x6 mm footprint offers an excellent thermal path via the exposed pad while keeping board area compact, making it ideal for high-current 12 V automotive systems where PCB real estate is constrained.
The OptiMOS 6 40 V process delivers a strong figure of merit (FOM = R<sub>DS(on)</sub> x Q<sub>G</sub>), minimizing switching and conduction losses simultaneously. Compared to the previous OptiMOS 5 generation, the 6th-generation die shrinks on-resistance per unit area, improving both thermal performance and efficiency in high-frequency switching applications. The robust avalanche-rated body diode and dv/dt ruggedness further support hard-switched topologies.
Typical applications include 12 V automotive ECU power switching, electric power steering (EPS), braking systems, body control modules, high-current DC-DC converters, and battery management system (BMS) protection. The 40 V rating also makes it well suited to industrial 24 V bus switching where transient headroom is required.
When designing with this MOSFET, observe safe operating area (SOA) limits at high V<sub>DS</sub> and I<sub>D</sub> combinations and ensure the gate drive voltage reaches at least 10 V for full enhancement. Drive strength and gate-loop inductance should be minimized to control switching losses and ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the IAUC100N04S6L014ATMA1 not found in the manufacturer datasheet alone, helping engineers shorten component selection and qualification cycles.
直接替換替代品，適用於 IAUC100N04S6L014ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IAUC100N04S6L014ATMA1 （相同外形與佔位） — 差異在於 Package, Technology, MSL Level, Part Family, Automotive Qualification.
IAUC120N04S6L012ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUC100N04S6L025ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUC60N04S6N031HATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUT300N08S5N011ATMA1
✅ 直接替換聯絡詢價
查看資料表 →NVMFS5C430N
✅ 直接替換📋 參考替代品（不在目錄中）
IAUC100N04S6L014ATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V |
| 電晶體類型 | N-Channel MOSFET |
| Mode | Enhancement |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm |
| Power Dissipation (P_D, Tc) | 100 W |
| 工作溫度範圍 | -55C to +175C |
| 封裝 | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| 安裝類型 | Surface Mount |
| AEC-Q101 Qualification | Yes |
| Technology | OptiMOS 6 |
| RoHS 狀態 | Compliant |
| MSL 等級 | 1 |
| Packaging | Tape & Reel (ATMA1 suffix) |
IAUC100N04S6L014ATMA1 腳位配置
| 腳位 1 | S — Source |
| 腳位 2 | S — Source |
| 腳位 3 | S — Source |
| 腳位 4 | G — Gate |
| 腳位 5 | S — Source |
| 腳位 6 | S — Source |
| 腳位 7 | S — Source |
| 腳位 8 | S — Source |
| 腳位 EP | D — Drain (exposed pad) |
安全工作區 (DC)
典型應用
IAUC100N04S6L014ATMA1 適用於 6 應用s: 12V Automotive ECU Power Switching, Electric Power Steering (EPS) Motor Drive, 48V-to-12V DC-DC Buck Converter High-Side Switch, Battery Management System (BMS) Protection Switch, Brake-by-Wire and Chassis Control Loads, Industrial 24V Bus Switching.
12V Automotive ECU Power Switching
The IAUC100N04S6L014ATMA1 is well suited to high-side or low-side power switching in 12 V automotive ECUs. Its 1.4 mOhm R_DS(on) at V_GS=10 V minimises conduction loss, and the 100 A continuous drain rating covers demanding loads such as fuel injectors, solenoid drivers, and PTC heater stages. AEC-Q101 qualification plus the 40 V V_DS rating provides the headroom needed for cold-crank and load-dump transients in 12 V vehicle electrical systems. The PG-TDSON-8 footprint is shared with many 12 V automotive loads, simplifying PCB reuse across ECU variants. Compared with a 60 V part, the 40 V rating is the cost-optimised sweet spot for 12 V systems.
推薦
Electric Power Steering (EPS) Motor Drive
EPS systems demand a 40 V MOSFET with low R_DS(on) to deliver high peak torque currents efficiently while keeping board temperature in check. The IAUC100N04S6L014ATMA1's 1.4 mOhm on-resistance and 100 A continuous rating support the half-bridge switches around a 12 V EPS motor, where transient currents can reach 80 A. The exposed drain pad of the SuperSO8 5x6 mm package spreads heat to the PCB copper pour, allowing sustained operation without external heatsinks. OptiMOS 6 switching losses are also low enough for PWM frequencies in the 20-50 kHz range typical of EPS current loops. AEC-Q101 qualification matches the automotive safety requirement.
推薦
48V-to-12V DC-DC Buck Converter High-Side Switch
In 12 V output rails of a 48 V mild-hybrid bus, the 40 V rating of the IAUC100N04S6L014ATMA1 is too low for direct use on the 48 V primary side; however, on the secondary (12 V) synchronous-rectifier side of a buck or on a downstream 12 V high-side switch, it is a strong choice. The 1.4 mOhm R_DS(on) keeps rectifier conduction loss minimal at 50-100 A loads, and OptiMOS 6 gate charge allows switching at 200-500 kHz to shrink magnetics. AEC-Q101 plus the 5x6 mm SuperSO8 footprint is well aligned with 48 V mild-hybrid power-module layouts. The exposed pad carries heat directly into the module baseplate.
推薦
Battery Management System (BMS) Protection Switch
The IAUC100N04S6L014ATMA1 is suitable for use as the high-side or low-side protection switch in 12 V lithium-ion battery management systems, where it must carry full load current and interrupt fault currents in microseconds. With 1.4 mOhm on-resistance and 100 A continuous current, it adds minimal voltage drop in the power path, preserving usable battery capacity. The 40 V V_DS rating covers 12 V systems with inductive load transients, and AEC-Q101 supports automotive BMS applications. The SuperSO8 5x6 mm package allows dense PCB layouts typical of pack-level BMS boards.
推薦
Brake-by-Wire and Chassis Control Loads
Brake-by-wire and active-chassis systems use high-current 12 V actuators and need AEC-Q101 MOSFETs with very low on-resistance to maintain precise control. The IAUC100N04S6L014ATMA1's 1.4 mOhm R_DS(on) and 100 A rating handle the solenoid and motor drive currents typical of brake modulators and active dampers, while the 40 V V_DS absorbs the back-EMF of inductive loads. The OptiMOS 6 process gives fast switching for the PWM control loops used in chassis control. The PG-TDSON-8 5x6 mm footprint is shared with chassis-domain 12 V switch ICs, allowing PCB consolidation.
推薦
Industrial 24V Bus Switching
The 40 V V_DS rating of the IAUC100N04S6L014ATMA1 also covers many industrial 24 V bus-switching applications, particularly when paired with adequate TVS protection on transient-prone lines. Its 1.4 mOhm on-resistance minimises steady-state loss in high-current relay-replacement circuits, while the 100 A continuous drain rating supports multi-kilowatt load blocks. The SuperSO8 5x6 mm package is industry-standard for industrial 24 V power boards, simplifying the BOM. For higher-voltage buses (48 V, 60 V), a V_DS upgrade is required; for 12 V, this part is over-spec only in the voltage headroom.
推薦
推薦產品摘要
工程參考資料，適用於 IAUC100N04S6L014ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IAUC120N04S6L012ATMA1 | IAUC100N04S6L025ATMA1 | IAUC60N04S6N031HATMA1 | IAUT300N08S5N011ATMA1 | NVMFS5C430N |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | DFN-5 (5x6 mm) - same |
| V_DS max (V) | 40 | 40 | 40 | 40 | 80 | 40 |
| R_DS(on) max (mOhm, V_GS=10V) | 1.4 | 1.2 | 2.5 | 3.1 | 1.1 | 4.3 |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | onsemi Trench |
| AEC-Q101 | Yes | Yes | Yes | Yes | Yes | Yes |
主要差異化特點
- Lowest R_DS(on) in the IAUC 100A 40V family (對比IAUC100N04S6L025ATMA1)
- Optimised for 12V automotive systems vs 80V mild-hybrid (對比IAUT300N08S5N011ATMA1)
- OptiMOS 6 latest-generation process (對比NVMFS5C430N (onsemi))
設計說明
Estimated: at I_D = 50 A and R_DS(on) = 1.7 mOhm (typical at 100C junction), conduction loss is approximately 4.25 W per switch, with a SuperSO8 5x6 mm theta_JA of about 50 C/W on a 1 sq-in copper pour giving a 213C junction temperature rise above 25C ambient. Ensure the PCB copper area is sized so that the steady-state junction temperature stays below 150C for AEC-Q100/Q101 margin. Use thermal vias under the exposed pad to spread heat to inner layers.
Place the gate drive loop area as small as possible: keep the gate resistor within 5 mm of the gate pin and use a ground-return path that does not share the source-sense trace. The high dv/dt of the drain can capacitively couple into the gate loop; adding a 10 kOhm gate-source pull-down resistor keeps the MOSFET off during controller start-up. The exposed drain pad must be soldered to a copper pour of at least 1 sq inch for the rated thermal performance.
Do not operate the IAUC100N04S6L014ATMA1 above 40 V V_DS, even transiently - the 40 V rating has limited avalanche headroom. Add a TVS diode or RC snubber if the application has inductive kick (solenoids, motors). For V_GS drive, use 10 V for full enhancement; at 4.5 V the on-resistance can more than double, causing severe conduction loss. Avoid body-diode-only commutation in synchronous-rectifier service if switching frequency exceeds 100 kHz - the reverse-recovery charge can cause shoot-through.
The PG-TDSON-8 5x6 mm land pattern is JEDEC-standard; follow IPC-7351 SuperSO8 guidelines for solder paste and mask. Use a 0.2 mm solder paste deposit on the exposed pad and 0.1 mm on the source leads to balance thermal via-in-pad soldering. For AEC-Q101 reliability, control the voiding under the exposed pad below 25% of the pad area - excessive voids increase thermal resistance and accelerate power-cycle fatigue.
合規資訊
AEC-Q101 qualified (discrete semiconductor automotive stress standard). RoHS and REACH compliant per Infineon product page. Lead-free reflow profile per JEDEC J-STD-020.
