IAUC100N10S5L054ATMA1 vs IAUCN10S5L280DATMA1 比較

詳細並排比較 IAUC100N10S5L054ATMA1 由 Infineon 與 IAUCN10S5L280DATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ 啟用中
Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 啟用中

規格比較

參數 IAUC100N10S5L054ATMA1 IAUCN10S5L280DATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 (IAUC automotive family) —
電晶體類型 N-Channel MOSFET —
Drain-to-Source Voltage (V_DS) 100 V —
Gate-to-Source Voltage (V_GS) [DATA_NEEDED: max V_GS value] —
Continuous Drain Current (I_D, Tj) 101 A —
Power Dissipation (P_D, Tc) 130 W —
R_DS(on) max at V_GS=10V 5.4 mΩ —
工作溫度範圍 -55°C to +175°C -55C to +175C (junction)
封裝 PG-TDSON-8-34 (surface mount) PG-TDSON-8-61 (SSO8)
安裝類型 Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology OptiMOS 5 trench OptiMOS 5 Trench MOSFET
MSL 等級 [DATA_NEEDED: MSL rating] 1
RoHS 狀態 Compliant Compliant
Product Family — OptiMOS 5
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
腳位數 — 8
Packing — Tape & Reel (T&R)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價