IAUC120N04S6N009ATMA1 vs IAUA120N04S5N014AUMA1 比較

詳細並排比較 IAUC120N04S6N009ATMA1 由 Infineon 與 IAUA120N04S5N014AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 啟用中
Infineon
IAUA120N04S5N014AUMA1 IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 ✓ 啟用中

規格比較

參數 IAUC120N04S6N009ATMA1 IAUA120N04S5N014AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 120 A —
脈衝汲極電流 [DATA_NEEDED: pulsed I_D value] —
R_DS(on) max @ V_GS=10V 0.9 mΩ —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: V_GS(th) typical value] —
Total Gate Charge Q_g typ [DATA_NEEDED: Q_g typical] —
Power Dissipation (Tc) 150 W —
Thermal Resistance R_thJC max 1.0 K/W —
工作接面溫度 -55 °C to +175 °C —
封裝 PG-TDSON-8-33 (5x6 mm) PG-HSOF-5-2 (sTOLL)
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
MSL 等級 1 [DATA_NEEDED: MSL rating]
RoHS Compliant —
Lead-Free / Halogen-Free Yes (per Infineon product page) —
Part Number — IAUA120N04S5N014AUMA1
Series — OptiMOS™ 5
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (V<sub>DSS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C — 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V — 1.4 mΩ
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C — 136 W
工作溫度範圍 — -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet]
腳位數 — 5 + Tab (6 effective)
Gate Drive — Enhancement Mode
RoHS 狀態 — Compliant
Avalanche Rated — Yes (100% avalanche tested)

資料表與資源

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