IAUC60N04S6N031HATMA1 vs IAUZN04S7L030ATMA1 比較
詳細並排比較 IAUC60N04S6N031HATMA1 由 Infineon 與 IAUZN04S7L030ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC60N04S6N031HATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | — |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | — |
| 封裝 | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (Automotive OptiMOS) |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 60 A |
| Pulsed Drain Current (IDM, Tj) | — | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | — | 3.05 mΩ |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Operating Junction Temperature (Tj) | — | -55C to +175C |
| Technology Family | — | OptiMOS-7 |
| Channel Type | — | N-Channel |
| RoHS Compliance | — | Compliant |