IAUC80N04S6N036ATMA1 vs IAUC100N08S5N043ATMA1 比較
詳細並排比較 IAUC80N04S6N036ATMA1 由 Infineon 與 IAUC100N08S5N043ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC80N04S6N036ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS-6 40 V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at T_C | 80 A | — |
| Power Dissipation (P_D) at T_C | 50 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm | — |
| On-Resistance R_DS(on) max at V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| 封裝 | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (SuperSO8) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | -55°C to +175°C |
| AEC-Q101 Qualification | Qualified (Automotive) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) | — |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) | — |
| Compliance - RoHS | Compliant | — |
| Compliance - REACH | Compliant | — |
| Part Series | — | IAUC / OptiMOS 5 |
| 電晶體類型 | — | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | — | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | — | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | — | 125 W (T<sub>C</sub>) |
| 腳位數 | — | 8 |
| 濕度敏感等級 (MSL) | — | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |
| Technology | — | OptiMOS 5 (Trench) |
| Channel Mode | — | Enhancement |