IMW120R045M1H vs SCT4062KRC15 比較
詳細並排比較 IMW120R045M1H 由 Infineon 與 SCT4062KRC15 由 ROHM Semiconductor. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IMW120R045M1H | SCT4062KRC15 |
|---|---|---|
| 品牌 | Infineon | ROHM Semiconductor |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolSiC SiC Trench MOSFET | Silicon Carbide (SiC), trench-gate |
| Drain-Source Voltage (VDS) | 1200 V | — |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C | — |
| Continuous Drain Current (ID) | 52 A at Tc = 25C | — |
| 功率耗散 (Ptot) | 228 W at Tc = 25C | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Recommended Turn-On Gate Voltage | 15 V | — |
| Turn-Off Gate Voltage | 0 V | — |
| Configuration | Single N-channel with built-in body diode | Single N-Channel |
| 安裝類型 | Through Hole | Through-Hole (THD) |
| 封裝 | PG-TO247-3-41 (TO-247-3) | TO-247-4L (4-pin through-hole, Kelvin source) |
| Qualification | Industrial grade | — |
| Gate Drive Compatibility | IGBT-compatible gate drive | — |
| dv/dt Control | Fully controllable via gate resistor | — |
| Body Diode | Robust, suitable for synchronous rectification | — |
| Turn-Off Switching Losses | Temperature independent | — |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime | — |
| Manufacturer | — | ROHM Semiconductor |
| Product Family | — | 4th-Gen SiC Trench MOSFET |
| 電晶體類型 | — | N-Channel SiC MOSFET |
| Drain-Source Voltage (V_DSS) | — | 1200 V |
| Continuous Drain Current (I_D, Tc) | — | 26 A |
| R_DS(on) (typ) | — | 62 mΩ @ V_GS = 18 V |
| Gate-Source Voltage (V_GS) Drive | — | 15 V nominal, ±18 V max |
| Power Dissipation (P_D, Tc=25°C) | — | 115 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Gate-Drive Logic | — | Standard SiC drive (15 V V_GS) |
| Short-Circuit Withstand | — | Yes (per datasheet) |
| RoHS 狀態 | — | Compliant |