IPB100N04S4H2ATMA1 vs IPC100N04S51R7ATMA1 比較

詳細並排比較 IPB100N04S4H2ATMA1 由 Infineon 與 IPC100N04S51R7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ 啟用中

規格比較

參數 IPB100N04S4H2ATMA1 IPC100N04S51R7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
工作接面溫度 -55C to +175C -55 °C to +175 °C
Storage Temperature [DATA_NEEDED: storage temp range] —
封裝 PG-TO263-3-2 (D2PAK-2) Surface Mount PG-TDSON-8-34 (SS08 leadless)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (up to 260C peak reflow) MSL1 (260 °C peak reflow)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant (Green Product) —
Manufacturer — Infineon Technologies
Series — OptiMOS-5
電晶體類型 — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
RoHS 狀態 — Compliant (Green Product)
Built-in Body Diode — Yes

資料表與資源

瀏覽所有產品 建立 BOM 索取報價