IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
MPN： IPC100N04S51R7ATMA1 ✓ 啟用中IPC100N04S51R7ATMA1 概覽
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate conduction between the drain and source terminals. Within the discrete-semiconductor hierarchy, MOSFETs sit under transistors and serve as the workhorse switching element in DC-DC converters, motor drives, and load switches. The OptiMOS-5 family targets best-in-class figure-of-merit (FOM = RDS(on) x Qg), giving system designers lower conduction and switching losses compared to older generations.
Key features of this part include AEC-Q101 automotive qualification, 100% avalanche-tested silicon, MSL1 rating to 260 °C peak reflow, a 175 °C maximum operating junction temperature, and RoHS-compliant lead-free terminations. The PG-TDSON-8-34 footprint exposes the drain via the thermal pad, which slashes package resistance and inductance versus traditional DPAK packages.
OptiMOS-5 40 V is optimized for 12 V and 24 V automotive subsystems such as ECU power rails, body electronics, electric power steering, and braking modules. The combination of very low on-resistance and high pulsed current handling makes the device equally suited to high-current synchronous rectification in 48 V mild-hybrid DC-DC stages and to battery-protection disconnect switches in e-mobility applications.
When designing with this device, observe safe operating area (SOA) by derating current with temperature; the 100 A rating applies at TC and falls as TC rises. Place the gate driver within a few millimeters of the gate pin to suppress ringing, and provide a low-impedance Kelvin source connection whenever possible. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet.
直接替換替代品，適用於 IPC100N04S51R7ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPC100N04S51R7ATMA1 （相同外形與佔位） — 差異在於 Package, MSL Level, Technology, Avalanche Tested, Automotive Qualification.
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查看資料表 →IPC100N04S51R7ATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-5 |
| 電晶體類型 | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | 40 V |
| Continuous Drain Current ID | 100 A (at TC) |
| Power Dissipation PD | 115 W (at TC) |
| Thermal Resistance RthJC | 1.3 K/W |
| 工作接面溫度 | -55 °C to +175 °C |
| 封裝 | PG-TDSON-8-34 (SS08 leadless) |
| 安裝類型 | Surface Mount |
| MSL 等級 | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualified | Yes |
| Avalanche Tested | 100% tested |
| RoHS 狀態 | Compliant (Green Product) |
| Built-in Body Diode | Yes |
IPC100N04S51R7ATMA1 腳位配置
| 腳位 1 | Source — Source terminal (Kelvin source recommended for gate-drive return) |
| 腳位 2 | Source — Source terminal |
| 腳位 3 | Source — Source terminal |
| 腳位 4 | Gate — Gate drive input |
| 腳位 5 | Source — Source terminal |
| 腳位 6 | Source — Source terminal |
| 腳位 7 | Source — Source terminal |
| 腳位 8 | Source — Source terminal |
| 腳位 PAD | Drain — Drain terminal and thermal pad (exposed) |
安全工作區 (DC)
典型應用
IPC100N04S51R7ATMA1 適用於 6 應用s: Automotive ECU Power Distribution, Electric Power Steering (EPS) Motor Drive, 48V Mild-Hybrid DC-DC Converter, Battery Protection Disconnect Switch, Industrial 24V Solenoid and Relay Driver, Hot-Swap and OR-ing Controllers.
Automotive ECU Power Distribution
The IPC100N04S51R7ATMA1 is well matched to automotive ECU power distribution rails because its 100 A continuous drain current supports high-current body-electronics loads while its 40 V VDS rating tolerates 12 V and 24 V bus transients including load-dump. AEC-Q101 qualification and 100% avalanche testing make it acceptable for ISO 26262 safety architectures under ASIL-B and ASIL-C decomposition. Placed as a high-side load switch with a gate driver within a few mm of the gate pin to suppress ringing, the device dissipates conduction losses roughly proportional to ID × RDS(on); versus a competing 60 A part the IPC100N04S51R7ATMA1 reduces parallel-FET count in high-current branches.
推薦
Electric Power Steering (EPS) Motor Drive
Electric power steering demands high pulse current capability during parking maneuvers combined with low conduction loss to preserve battery range. The IPC100N04S51R7ATMA1's 100 A continuous rating and 193 A pulsed silicon ceiling accommodate the multi-kilowatt peak power of column-assist EPS systems, while the 1.3 K/W RthJC keeps junction temperature manageable when the PG-TDSON-8-34 thermal pad is soldered to a 2-square-inch copper pour. Used as the low-side synchronous FET in a 3-phase bridge, the part replaces legacy DPAK MOSFETs at lower switching loss thanks to the OptiMOS-5 40 V FOM advantage.
推薦
48V Mild-Hybrid DC-DC Converter
Mild-hybrid 48 V vehicles integrate a 48 V bus that requires a 40 V-class MOSFET to step down to 12 V with high efficiency. The IPC100N04S51R7ATMA1's 40 V VDS rating with derating margin suits 48 V bus transients, and its 100 A ID rating supports multi-kW synchronous rectification stages. The OptiMOS-5 platform's low Qg × RDS(on) FOM minimizes switching loss at 100-200 kHz switching frequencies, while the SS08 leadless PG-TDSON-8-34 package cuts loop inductance versus DPAK, reducing voltage overshoot and snubber losses in hard-switched topologies.
推薦
Battery Protection Disconnect Switch
In e-mobility battery management, the IPC100N04S51R7ATMA1 serves as a high-current disconnect switch between the lithium pack and the traction inverter. The 100 A continuous rating accommodates continuous discharge currents up to 12-15 kW at pack voltages of 36-48 V, while the avalanche-rated body diode protects against reverse-battery fault events. Mounted on the PG-TDSON-8-34 thermal pad with substantial copper, the FET stays well within the 175 °C junction limit during fault-clearing events. AEC-Q101 qualification is required for ISO 26262 battery-pack architectures.
推薦
Industrial 24V Solenoid and Relay Driver
Industrial 24 V solenoid drivers benefit from the IPC100N04S51R7ATMA1's 40 V VDS rating (with 24 V bus plus inductive flyback margin) and 100 A peak handling for high-inrush solenoid coils. The avalanche-rated body diode clamps inductive kickback, eliminating external freewheeling diodes in many designs. Combined with a low-cost gate driver, the FET can switch solenoids at 1-2 kHz PWM for proportional control while sustaining continuous currents of tens of amps in valve and actuator arrays.
推薦
Hot-Swap and OR-ing Controllers
Hot-swap controllers in server and telecom 12 V/24 V distribution use the IPC100N04S51R7ATMA1 as the inrush-limiting pass-FET. The 40 V VDS rating with derating margin covers 12 V and 24 V buses with transient tolerance, and the 100 A ID rating supports high-current server rails. The low RDS(on) reduces steady-state voltage drop across the hot-swap FET, which improves power-supply efficiency at load. The avalanche-rated body diode doubles as reverse-polarity protection in OR-ing configurations, removing the need for a discrete Schottky.
推薦
推薦產品摘要
工程參考資料，適用於 IPC100N04S51R7ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPB100N04S4H2ATMA1 | IPC100N04S5L1R5ATMA1 | IPC70N04S5L4R2ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8 (same family) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8 (same family) |
| Drain-Source Voltage VDS | 40 V | 40 V | 40 V | 40 V | 60 V |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes |
| Avalanche Tested | 100% tested | 100% tested | 100% tested | 100% tested | 100% tested |
| Operating Temperature | 175 °C max | 175 °C max | 175 °C max | 175 °C max | 175 °C max |
| RoHS Status | Compliant (Green Product) | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Highest continuous current in 40 V OptiMOS-5 PG-TDSON family (對比IPC70N04S5L4R2ATMA1)
- Lower RDS(on) per package area than competing 60 V parts (對比ISC015N06NM5ATMA1)
- AEC-Q101 qualified with 100% avalanche testing (對比Industrial-grade non-AEC parts)
設計說明
Estimated: at TC = 25 °C, RthJC = 1.3 K/W gives a silicon ceiling of about 193 A. In a real PCB design with PG-TDSON-8-34 mounted on 1 sq-inch of 2 oz copper, RthJA is roughly 35-40 K/W, so continuous ID at TA = 25 °C is closer to 3-4 A. Designers must derate for PCB copper area, ambient temperature, and switching losses. Add thermal vias under the exposed pad and consider a top-side copper pour for high-current applications.
Keep the gate-driver loop area as small as possible, ideally within 5 mm of the gate and Kelvin source pins. Use a 4-layer PCB with a dedicated ground plane beneath the FET to minimize source-inductance ringing. Place a 10-100 nF ceramic bypass capacitor close to the gate-driver supply pin to provide peak gate-charge current during switching transitions.
Do not exceed VGS = ±20 V absolute maximum; stay within the datasheet-recommended gate-drive voltage (typically 10 V). Avoid continuous operation near SOA boundaries where RDS(on) drift from self-heating can cause thermal runaway. When using the body diode for freewheeling, derate for reverse-recovery losses at high switching frequencies, or add an external Schottky for hard-switched topologies.
合規資訊
AEC-Q101 qualified (automotive-grade), MSL1 to 260 °C peak reflow, 100% avalanche tested, RoHS compliant Green Product per Infineon datasheet.
