IPB60R040CFD7ATMA1 vs IPB014N06NATMA1 比較

詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPB014N06NATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 IPB60R040CFD7ATMA1 IPB014N06NATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET OptiMOS 5 (trench-gate)
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功率耗散 (TC=25°C) 227 W —
工作溫度範圍 -55°C to +150°C —
封裝 PG-TO263-3-2 (D2PAK) PG-TO263-7 (D2PAK-7)
安裝類型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等級 1 —
RoHS 狀態 Compliant —
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Transistor Polarity — N-Channel
Continuous Drain Current (ID) at Ta — 34 A
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 214 W
On-Resistance RDS(on) max — 1.4 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
工作接面溫度 — -55 °C to +175 °C
Avalanche Rating — 100% avalanche tested
Qualification — JEDEC qualified for target applications
Primary Application — Synchronous rectification, motor control

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