IPB90N06S4L04ATMA2 vs IRF2907ZSTRLPBF 比較

詳細並排比較 IPB90N06S4L04ATMA2 由 Infineon 與 IRF2907ZSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 ✓ 啟用中

規格比較

參數 IPB90N06S4L04ATMA2 IRF2907ZSTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IPB90N06S4L04ATMA2 —
Technology OptiMOS T2, N-channel enhancement mode IR HEXFET / IR MOSFET
Drain-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D, Tc) 90 A —
Pulsed Drain Current (I_D,pulse) 360 A —
Power Dissipation (P_D, Tc) 150 W —
On-State Resistance R_DS(on) (typ @ VGS=10V) 3.4 mΩ —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Gate-Source Voltage (V_GS) ±20 V —
工作溫度範圍 -55 °C to +175 °C —
封裝 PG-TO263-3-2 (D2PAK) D2PAK (TO-263AB) surface mount
安裝類型 Surface Mount Surface Mount (SMD)
MSL 等級 MSL1 (unlimited floor life) —
Peak Reflow Temperature 260 °C —
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested —
RoHS / Halogen-Free Yes (Green Product) —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
連續汲極電流 (TC=25°C) — 170 A
連續汲極電流 (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
工作接面溫度 — -55 C to +175 C
腳位數 — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)
RoHS 狀態 — Compliant
Avalanche Rating — Repetitive avalanche allowed up to TJ(max)

資料表與資源

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