IPD031N03LGATMA1 vs IPB081N06L3GATMA1 比較
詳細並排比較 IPD031N03LGATMA1 由 Infineon 與 IPB081N06L3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD031N03LGATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| 工作溫度 | -55 °C to +175 °C (junction) | — |
| 封裝 | PG-TO252-3-11 (DPAK-2) | PG-TO263-3 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 (unlimited) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | — | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 79 W |
| 工作溫度範圍 | — | -55 C to +175 C (junction) |
| 腳位數 | — | 3 |
| Pin Configuration | — | Gate / Drain / Source (D2PAK standard) |