IPD082N10N3GATMA1 vs IPD038N06NF2SATMA1 比較

詳細並排比較 IPD082N10N3GATMA1 由 Infineon 與 IPD038N06NF2SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD038N06NF2SATMA1 IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon

IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon

IPD038N06NF2SATMA1 ✓ 啟用中

規格比較

參數 IPD082N10N3GATMA1 IPD038N06NF2SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (Trench N-Channel) OptiMOS (Trench)
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
工作接面溫度 -55°C to +175°C -55°C to +175°C
封裝 / 外殼 PG-TO252-3 (DPAK), surface mount —
安裝類型 Surface Mount Surface Mount
腳位數 3 (Gate, Drain, Source) —
RoHS 狀態 Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
MSL 等級 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 120 A
Continuous Drain Current (ID) at TA=25°C — 20 A
Gate-Source Voltage (VGS) max — ±20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 3.85 mΩ max
Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Typical Gate Charge (Qg) at VGS=10V — 68 nC
Input Capacitance (Ciss) — 6700 pF
Output Capacitance (Coss) — 670 pF
Reverse Transfer Capacitance (Crss) — 43 pF
Power Dissipation (PD) at TA=25°C — 3 W
Power Dissipation (PD) at TC=25°C — 107 W
封裝 — PG-TO252-3 (DPAK)
Channel Mode — Enhancement

資料表與資源

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