IPD60R210PFD7SAUMA1 vs IPD60R145CFD7ATMA1 比較

詳細並排比較 IPD60R210PFD7SAUMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 啟用中

規格比較

參數 IPD60R210PFD7SAUMA1 IPD60R145CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
安裝類型 Surface Mount (SMT) Surface Mount (DPAK, 3-pin + tab)
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
工作溫度範圍 -55C to +150C (TJ) —
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
封裝 — TO-252AA (DPAK) surface mount
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
工作溫度 — -55C to +150C (junction)
腳位數 — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
MSL 等級 — [DATA_NEEDED: MSL rating]
RoHS 狀態 — Compliant
Target Application — ZVS / LLC resonant converters, soft switching

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