IPD60R280P7SAUMA1 vs IPD80R1K4P7ATMA1 比較
詳細並排比較 IPD60R280P7SAUMA1 由 Infineon 與 IPD80R1K4P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R280P7SAUMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | 3.5 V (typ) |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | N-Channel Superjunction |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| Series | CoolMOS P7 (7th generation, 600 V) | CoolMOS P7 |
| RoHS 狀態 | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| 功率耗散 (Ptot) | — | 32 W |
| 工作接面溫度 | — | -55C to +150C |
| 腳位數 | — | 3 (Gate, Drain/Tab, Source) |
| REACH Status | — | Compliant |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |