IPD60R360P7ATMA1 vs IPW60R037P7XKSA1 比較
詳細並排比較 IPD60R360P7ATMA1 由 Infineon 與 IPW60R037P7XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R360P7ATMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS™ P7 |
| Technology | Superjunction (SJ) N-channel MOSFET | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Continuous Drain Current (I_D) at T_C=25°C | 9 A | — |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max @ V_GS=10V | 360 mΩ | — |
| Total Power Dissipation (P_tot) at T_C=25°C | 41 W | — |
| 工作接面溫度 | -55°C to +150°C | -55 °C to +150 °C |
| Storage Temperature | -55°C to +150°C | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK), surface mount | — |
| 安裝類型 | Surface Mount | Through Hole |
| Gate Threshold Voltage (V_GS(th)) typ | 3.5 V (typ) | — |
| ESD Protection (HBM) | >2 kV (per datasheet) | — |
| MSL 等級 | 1 (per JEDEC J-STD20) | — |
| RoHS Compliance | Compliant | — |
| Qualification | Industrial grade per JEDEC (J-STD20, JESD22) | — |
| 電晶體類型 | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| 封裝 | — | PG-TO247-3 (TO-247-3, through-hole) |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| RoHS 狀態 | — | Compliant |
| Avalanche Rated | — | Yes |