IPD80R600P7ATMA1 vs IPD60R600P6ATMA1 比較
詳細並排比較 IPD80R600P7ATMA1 由 Infineon 與 IPD60R600P6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD80R600P7ATMA1 | IPD60R600P6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | — |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| 工作溫度範圍 | -55 C to +150 C | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS P6 (superjunction N-channel MOSFET) |
| Polarity | N-Channel | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Drain-Source Voltage (Vds) | — | 600 V |
| Continuous Drain Current (Id, Tc) | — | 7.3 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse value] |
| On-State Resistance Rds(on) | — | 540 mOhm (typ, per Infineon product page) |
| Power Dissipation (Pd, Tc) | — | 63 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Body Diode Reverse Recovery | — | Fast recovery (CoolMOS P6 family characteristic) |
| 工作接面溫度 | — | -40C to +150C |
| RoHS 狀態 | — | Compliant (per Infineon product page) |
| Application Family | — | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS |
| Series | — | CoolMOS P6 industrial grade |