IPD80R600P7ATMA1 - 800V 600mΩ CoolMOS P7 MOSFET | Infineon
MPN： IPD80R600P7ATMA1 ✓ 啟用中IPD80R600P7ATMA1 概覽
What is a CoolMOS P7 power MOSFET? CoolMOS is Infineon's super-junction MOSFET technology, a power-semiconductor architecture that stacks alternating P/N epitaxial layers to dramatically shrink on-resistance per unit area at high blocking voltages. P7 is the seventh-generation CoolMOS family, optimized for ease-of-use, fast switching, low gate charge, and integrated protection features that simplify LLC, flyback, and PFC converter designs.
Key features include 800V drain-source breakdown voltage (V(BR)DSS), 600 mΩ maximum RDS(on) at VGS=10V, integrated gate-source ESD protection, and very low gate charge (Qg) for reduced driver losses. The device supports continuous drain current of 8A at case temperature and pulsed drain current of 22A, allowing it to handle inrush and transient overload conditions common in power-conversion circuits.
The CoolMOS P7 architecture delivers ultra-low specific on-resistance, integrated Zener-protected gate, and rugged body-diode behavior for hard-switching topologies. With a gate threshold of approximately 3V and a maximum gate-source rating of ±30V, the part is straightforward to drive from standard gate-driver ICs while remaining tolerant to supply transients in 230V/400V mains environments.
Typical applications include SMPS (switch-mode power supplies), PFC boost stages, flyback and forward converters, LED lighting drivers, industrial auxiliary supplies, and e-mobility chargers. The 800V rating provides substantial margin over 230VAC rectified peaks (~373V), supporting reliable operation across universal-input designs.
When designing with this MOSFET, ensure the gate-drive voltage is at least 10V to achieve the lowest RDS(on), and keep stray source inductance low by minimizing the gate-driver loop area. Always check the avalanche rating (EAS) and use proper heatsinking to keep junction temperature below 150°C for long-term reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
直接替換替代品，適用於 IPD80R600P7ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPD80R600P7ATMA1 （相同外形與佔位） — 差異在於 Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, Gate Threshold Voltage (VGS(th)).
IPLK80R600P7ATMA1
✅ 直接替換📋 參考替代品（不在目錄中）
IPB60R190C6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPD068N10N3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC014NE2LSIATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPD80R600P7ATMA1 最大額定值與電氣特性
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID, Tc) | 8 A |
| Pulsed Drain Current (IDM) | 22 A |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ |
| 工作溫度範圍 | -55 C to +150 C |
| 封裝 | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount |
| Technology | CoolMOS P7 super-junction |
| Polarity | N-Channel |
| MSL 等級 | 1 (per JEDEC J-STD-020) |
IPD80R600P7ATMA1 腳位配置
| 腳位 1 | Gate — MOSFET gate drive input (integrated Zener ESD protection) |
| 腳位 2 | Drain — MOSFET drain - internally connected to the metal tab |
| 腳位 3 | Source — MOSFET source (return path for gate drive and load current) |
| 腳位 Tab | Drain — Metal tab - electrically tied to Drain (pin 2), must be soldered to PCB copper pour for thermal dissipation |
安全工作區 - IPD80R600P7
典型應用
IPD80R600P7ATMA1 適用於 6 應用s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stages, LED Lighting Drivers, Industrial Auxiliary Power Supplies, E-Mobility and EV Chargers, Solar Inverters and Renewable Energy.
Switch-Mode Power Supplies (SMPS)
The IPD80R600P7ATMA1 is purpose-built for offline switch-mode power supplies where 800V voltage margin and low conduction loss are critical. Its 600 mΩ RDS(on) minimizes conduction loss in continuous-conduction-mode flyback and forward topologies, while the CoolMOS P7 super-junction architecture delivers fast switching with low gate charge (Qg), reducing driver-stage losses. Placed between the rectified mains bus and the transformer primary, it operates reliably across 85-265VAC universal input designs. According to Infineon's CoolMOS P7 datasheet, the integrated Zener-protected gate eliminates the need for external gate protection networks in standard SMPS designs, simplifying the BOM.
推薦
Power Factor Correction (PFC) Boost Stages
The IPD80R600P7ATMA1 is well-suited for PFC boost converter stages in 230VAC industrial supplies and white goods. Its 800V drain-source rating comfortably exceeds the typical 400V PFC bus voltage, providing substantial margin during line transients and load steps. The CoolMOS P7 technology offers low gate charge and fast body-diode recovery, critical for hard-switched boost topologies where reverse-recovery losses would otherwise dominate. According to Infineon's application notes, designers can pair this MOSFET with the ICE3PCS03 controller to achieve >0.95 power factor across universal input ranges, while the 60W power dissipation in DPAK supports heatsink-free designs at moderate power levels.
推薦
LED Lighting Drivers
The IPD80R600P7ATMA1 is widely used in high-power LED driver circuits for industrial and commercial lighting. Its 800V breakdown rating handles rectified 230VAC mains with safety margin, while the 600 mΩ on-resistance keeps conduction losses manageable at typical LED driver currents (1-3A). In flyback-based constant-current LED drivers, the CoolMOS P7 technology enables high-frequency operation, shrinking the transformer and output capacitor sizes. According to Infineon's lighting reference designs, this MOSFET's low gate charge reduces EMI and enables simpler snubber networks, helping designers meet EN 55015 conducted-emissions standards without extensive filtering.
推薦
Industrial Auxiliary Power Supplies
The IPD80R600P7ATMA1 is a strong choice for industrial 24V/48V auxiliary supplies that power control boards, sensors, and communication interfaces. Its 800V rating supports direct operation from 230VAC or 400VAC industrial mains without intermediate step-down stages, simplifying the system architecture. The CoolMOS P7 technology delivers high efficiency (typically 90%+) at 50-100W output levels, while the rugged body-diode handles the hard-switching commutation in LLC and half-bridge topologies. According to Infineon's industrial reference designs, this MOSFET's PG-TO252-3 package enables compact designs that fit into DIN-rail mountable enclosures with minimal heatsinking.
推薦
E-Mobility and EV Chargers
The IPD80R600P7ATMA1 supports onboard EV charger and e-mobility auxiliary converter designs. Its 800V breakdown voltage provides safety margin beyond 400V traction battery buses, while the 600 mΩ RDS(on) balances conduction loss against switching loss at the moderate switching frequencies used in onboard chargers. In PFC + LLC two-stage EV charger architectures, this MOSFET handles the PFC boost switch role with reliable avalanche ruggedness (EAS=20mJ) during load transients. According to Infineon's EV charging reference designs, the integrated gate ESD protection simplifies the gate-drive circuit and reduces BOM count for cost-sensitive automotive-adjacent designs.
推薦
Solar Inverters and Renewable Energy
The IPD80R600P7ATMA1 fits small string-inverter and micro-inverter applications up to a few hundred watts, where its 800V rating handles the rectified PV panel voltage (open-circuit up to ~600V for residential 600V string designs). The CoolMOS P7 super-junction technology delivers high efficiency across wide load ranges, important for solar inverters that must operate efficiently from 10% to 100% of rated power. According to Infineon's renewable energy datasheets, the low gate charge (Qg) and integrated body-diode robustness enable reliable operation in H4 and HERIC transformerless topologies common in modern micro-inverter designs.
推薦
推薦產品摘要
工程參考資料，適用於 IPD80R600P7ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPLK80R600P7ATMA1 | IPB60R190C6ATMA1 | IPD068N10N3GATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Drain-Source Voltage (VDS) | 800 V | 800 V | 600 V | 100 V | 25 V |
| On-Resistance (RDS(on), max) | 600 mΩ | 600 mΩ | 190 mΩ | 6.8 mΩ | 1.4 mΩ |
| Continuous Drain Current (ID) | 8 A | 8 A | 20 A | 90 A | 100 A+ |
| Technology Family | CoolMOS P7 (super-junction) | CoolMOS P7 | CoolMOS C6 | OptiMOS | OptiMOS |
| Maximum Power Dissipation | 60 W | 60 W | 60 W | 100 W | 100 W |
| Lifecycle Status | Active | End of Life (per Mouser listing) | Active | Active | Active |
主要差異化特點
- Direct pin-to-pin drop-in alternative with identical silicon (對比IPLK80R600P7ATMA1)
- Higher voltage margin than 600V CoolMOS C6 (對比IPB60R190C6ATMA1)
- Integrated gate Zener ESD protection (對比Standard 800V MOSFETs without integrated protection)
設計說明
Estimated: At continuous 8A drain current with 600 mΩ RDS(on), conduction loss is approximately 8A² × 0.6Ω = 38.4W. The PG-TO252-3 (DPAK) package has a typical junction-to-ambient thermal resistance of 62 C/W on a standard JEDEC 1sq-in copper pour, producing a junction temperature rise of 38.4W × 62 C/W = 2381 C above ambient - clearly above the 150 C limit. A minimum 4-6 sq-inch copper pour plus airflow, or a clip-on heatsink, is required to keep junction temperature below 125 C at full load. Always measure the actual thermal performance with a thermocouple on the tab during worst-case load testing.
The PG-TO252-3 package drain tab is electrically connected to the drain terminal and must be soldered to a copper pour on the PCB top layer. Use thermal vias (typically 0.3mm diameter, 1mm pitch) under the tab to conduct heat to inner copper layers. Minimize the gate-driver loop area to reduce stray inductance that can cause ringing and gate-overshoot. According to Infineon's CoolMOS application notes, place a 10-100Ω gate resistor close to the gate pin to dampen oscillations without slowing switching speed excessively.
Do not exceed the ±30V maximum gate-source voltage rating - even brief overshoot during turn-off transients can puncture the gate oxide. Use a gate-source resistor (10-100kΩ) to hold the gate at 0V when the driver is floating. The 800V drain-source rating is the absolute maximum; for reliable long-term operation, design for VDS peaks below 700V to avoid degradation. According to the Infineon datasheet, the avalanche energy rating (EAS=20mJ) is for single-pulse events - repetitive avalanche (EAR=0.17mJ) is much lower and indicates the device is not intended for repetitive avalanche operation.
Keep the high-current loop (drain-source-load-return) area as small as possible to minimize parasitic inductance. According to standard SMPS layout guidance, route the gate-drive traces away from the drain node to avoid capacitive coupling that can falsely trigger the MOSFET. Use a star-ground topology with the source-pin ground as the reference for the gate driver return. For PFC and LLC topologies, place the gate-drive optocoupler or transformer close to the MOSFET to keep the gate-drive loop compact.
合規資訊
RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free. Industrial grade - not AEC-Q100 qualified; for automotive applications use AEC-Q100 qualified Infineon parts such as IPD80R600P7ATMA1's automotive variants if available.
