IPD90N06S407ATMA2 vs IPD30N10S3L34ATMA2 比較

詳細並排比較 IPD90N06S407ATMA2 由 Infineon 與 IPD30N10S3L34ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ 啟用中
Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ 啟用中

規格比較

參數 IPD90N06S407ATMA2 IPD30N10S3L34ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel Enhancement Mode N-Channel
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D at T_C) 90 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] 180 A
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm —
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA —
Total Gate Charge (Q_G) at V_GS=10 V 56 nC —
Maximum Power Dissipation (P_D at T_C) 79 W —
工作接面溫度 -55 C to +175 C -55 C to +175 C
Storage Temperature [DATA_NEEDED: storage temperature range] —
封裝 PG-TO252-3-11 (DPAK) —
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 Qualified AEC-Q101
Avalanche Rating 100% Avalanche Tested —
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
Power Dissipation (P_D, Tc) — 57 W
R_DS(on) max at V_GS=10V — 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max — 2.4 V
Total Gate Charge (Qg) max — 31 nC
Package / Supplier Device Package — PG-TO252-3-11 (DPAK)
Pin / Tab Count — 3 (2 + Tab)
Technology — OptiMOS-T (trench)
MSL 等級 — [DATA_NEEDED: MSL level]
RoHS 狀態 — Compliant

資料表與資源

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