IPN80R1K2P7ATMA1 vs IPN80R1K4P7ATMA1 比較
詳細並排比較 IPN80R1K2P7ATMA1 由 Infineon 與 IPN80R1K4P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN80R1K2P7ATMA1 | IPN80R1K4P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family / Series | CoolMOS P7 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | Superjunction (CoolMOS P7) |
| 封裝 | SOT-223 (3-pin, 2 + tab) | PG-SOT223 (surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55°C to +150°C (TJ) | -55C to +150C |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | CoolMOS P7 (500V-950V) |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 4 A |
| Static Drain-Source On-Resistance (RDS(on) max) | — | 1200 mOhm |
| Power Dissipation (Tc) | — | 7 W |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| RoHS 狀態 | — | Compliant |
| Grade | — | Industrial |